ECSCRMEuropean Conference on Silicon Carbide and Related Materials
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The 280 papers delivered during the September 2012 ECSCRM are arranged into ten sessions on bulk growth of silicon carbide, graphen growth, epitaxial growth 4H and 3C, characterization of material and point defects, interface characterization, electrical and structural characterization, MOS processing, and device applications.
Silicon carbide and related materials 2006; ECSCRM proceedings.