EPHEMTEnhancement-Mode Pseudomorphic High Electron Mobility Transistor
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We chose a GaAs enhancement-mode pseudomorphic High-Electron Mobility (EpHEMT) [28] LNA device from Avago (Agilent) for our ULNA design [29] (the ATF54143 [30, 31]), in view of a number of factors, but most notably its pseudomorphic construction [32], excellent stability, high-linearity, reasonably low-noise, and high-gain performance at few GHz (our region of interest) and GaAs construction which enables it to operate at cryogenic temperatures.
The model ATF-52189 and model ATF-53189 are high linearity enhancement-mode pseudomorphic high electron-mobility transistor (ePHEMT) field effect transistors (FET).
The amplifier is designed using the latest ePHEMT technology, only requires a single positive supply voltage and has unconditional stability.