The Extreme Ultraviolet Lithography (EUVL) Full-Field Step-Scan System for Patterning Future Generations of Microelectronics is one of those programs.
EUVL was developed by Sandia National Laboratories, Livermore, Calif.; Lawrence Livermore (Calif.) National Laboratory; Lawrence Berkeley (Calif.) National Laboratory; and Northrop Grumman Space Technology/Cutting Edge Optronics, St.
A leading NGL candidate is extreme ultraviolet lithography, or EUVL
. But during its 10-plus years of R&D, EUVL
has been both the darling and the black sheep of the industry.