EUVLExtreme-Ultraviolet Lithography
EUVLEuroopan Unionin Virallinen Lehti (Finnish: European Union's Official Journal)
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"EUVL uses 13.4 nanometers, which is 15 times shorter than the 193-nm wavelength of light used in today's leading edge lithographic tools." The wavelength of visible light is 400 to 700 nanometers.
We have commissioned an EUV reflectometer that is capable of measuring the largest optics of the [beta]-generation of EUVL steppers.
The Extreme Ultraviolet Lithography (EUVL) Full-Field Step-Scan System for Patterning Future Generations of Microelectronics is one of those programs.
EUVL was developed by Sandia National Laboratories, Livermore, Calif.; Lawrence Livermore (Calif.) National Laboratory; Lawrence Berkeley (Calif.) National Laboratory; and Northrop Grumman Space Technology/Cutting Edge Optronics, St.
A leading NGL candidate is extreme ultraviolet lithography, or EUVL. But during its 10-plus years of R&D, EUVL has been both the darling and the black sheep of the industry.