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EDLEnglish Defence League (est. 2009; UK)
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References in periodicals archive ?
Kornegay, "Improved independent gate N-type FinFET fabrication and characterization," IEEE Electron Device Letters, vol.
Sune, "A compact model for oxide breakdown failure distribution in ultrathin oxides showing progressive breakdown," IEEE Electron Device Letters, vol.
Arlelid et al., "High-frequency performance of self-aligned gate-last surface channel [In.sub.0.53][Ga.sub.0.47]As MOSFET," IEEE Electron Device Letters, vol.
Nanver, et al., "Surface-passivated high-resistivity silicon substrates for RFICs," IEEE Electron Device Letters, Vol.
Schwindt et al., "AlGaN/GaN HEMTs on SiC with [f.sub.T] of over 120 GHz," IEEE Electron Device Letters, vol.
Shi, "A novel latch-up protection for bulk-silicon scan driver ICs of shadow-mask plasma-display panel," IEEE Electron Device Letters, vol.
Lee et al., "Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes," IEEE Electron Device Letters, vol.
Ohno, "Copper gate AlGaN/GaN HEMT with low gate leakage current," IEEE Electron Device Letters, vol.
The findings of the study appear in an upcoming issue of IEEE Electron Device Letters. (ANI)
Gaitan, "Large Suspended Inductors on Silicon and Their Use in a 2[micro]m CMOS RF Amplifier," IEEE Electron Device Letters, Vol.
The researchers will report in the October IEEE ELECTRON DEVICE LETTERS that the transconductance of their devices is 40 percent higher than that reported for other silicon devices operating at room temperature and is comparable to that of gallium arsenide devices (which have been pursued largely because they promised greater performance and faster speeds than their silicon counterparts).
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