EDL

(redirected from Electron Device Letters)
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AcronymDefinition
EDLEnglish Defence League (est. 2009; UK)
EDLEuropean Day of Languages (EU)
EDLÉtat des Lieux (French housing inspections)
EDLEdit Decision List (video production)
EDLElectronic Differential Lock (automotive)
EDLEntreprise et Développement Local (French: Enterprise and Local Development)
EDLEnhanced Driver's License (driver's license and border-crossing identification)
EDLÉtudes de Lettres (French: Studies of Letters; Switzerland)
EDLExtensor Digitorum Longus
EDLElectronic Document Library
EDLEnglish Disco Lovers (internet movement; UK)
EDLÉcole du Louvre (French school)
EDLEuropean Digital Library (project; EU)
EDLEngineering Data Library
EDLEntity Definition Language
EDLElectronic Differential Locks
EDLEdit Decision List
EDLExchange Data Link
EDLÉditions de Lodi (French publisher)
EDLEvery Day Life (band)
EDLElectricite du Laos (Vientiane, Laos)
EDLElectron Device Letters (IEEE journal)
EDLEssential Drugs List
EDLÉquipe de Développement Local (French: Local Development Team)
EDLÉquations Différentielles Linéaires (French: Linear Differential Equations)
EDLÉlectricité du Liban
EDLEthernet Data Link
EDLEMC Disk Library
EDLEngineering Design Laboratory (various organizations)
EDLEntry Descent Landing (NASA)
EDLEthnomathematics Digital Library (Pacific Resources for Education and Learning)
EDLEthiopian Democratic League (political group)
EDLEvent Definition Language
EDLEstimated Detection Limit
EDLEvent Driven Language
EDLEmissaries of Divine Light
EDLEntitlements Destroy Lives (website)
EDLElectronic Discussion List
EDLEnvironmental Disposal Liability
EDLEmail Distribution List (various organizations)
EDLEducational Development Laboratories
EDLEquipment Density List
EDLEngineering Development Lab
EDLEnterprise Definition Language
EDLEngineering Data List
EDLEquivalent Double Layer
EDLEconomic Discard Limit
EDLEngineering Design Lab (various universities)
EDLElectronic Defense Laboratories
EDLElectrical Discharge Laser
EDLElectronic Delay Line
EDLElectronic Driver License Project
EDLEnd Degrading Link
EDLEngineering Drawing List
EDLElectricité de Laufenbourg (French; electricity company; Laufenburg, Switzerland)
EDLEngineering Document Library
EDLExpected Description Length (coding scheme)
EDLEquipment Deficiency Logs
EDLEconomic Disposal Limit
EDLExotic Disease Laboratory
EDLEssential Drawing List
EDLEnhanced Data Link
EDLEuropean Distribution Lawyers (Spezialanwälte für Vertragshändlerrecht)
EDLEnigma Development Language
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References in periodicals archive ?
Kornegay, "Improved independent gate N-type FinFET fabrication and characterization," IEEE Electron Device Letters, vol.
Sune, "A compact model for oxide breakdown failure distribution in ultrathin oxides showing progressive breakdown," IEEE Electron Device Letters, vol.
Arlelid et al., "High-frequency performance of self-aligned gate-last surface channel [In.sub.0.53][Ga.sub.0.47]As MOSFET," IEEE Electron Device Letters, vol.
Nanver, et al., "Surface-passivated high-resistivity silicon substrates for RFICs," IEEE Electron Device Letters, Vol.
Schwindt et al., "AlGaN/GaN HEMTs on SiC with [f.sub.T] of over 120 GHz," IEEE Electron Device Letters, vol.
Shi, "A novel latch-up protection for bulk-silicon scan driver ICs of shadow-mask plasma-display panel," IEEE Electron Device Letters, vol.
Lee et al., "Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes," IEEE Electron Device Letters, vol.
Ohno, "Copper gate AlGaN/GaN HEMT with low gate leakage current," IEEE Electron Device Letters, vol.
The findings of the study appear in an upcoming issue of IEEE Electron Device Letters. (ANI)
Gaitan, "Large Suspended Inductors on Silicon and Their Use in a 2[micro]m CMOS RF Amplifier," IEEE Electron Device Letters, Vol.
The researchers will report in the October IEEE ELECTRON DEVICE LETTERS that the transconductance of their devices is 40 percent higher than that reported for other silicon devices operating at room temperature and is comparable to that of gallium arsenide devices (which have been pursued largely because they promised greater performance and faster speeds than their silicon counterparts).
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