EBSD

(redirected from Electron backscatter diffraction)
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AcronymDefinition
EBSDElectron Backscatter Diffraction
EBSDEast Brunswick School District (New Jersey)
References in periodicals archive ?
Electron Backscatter Diffraction in Materials Science, Kluwer Academic, New York, 2000.
Electron backscatter diffraction is a scanning electron microscope (SEM) based technique which has become well known as a powerful and versatile experimental tool for materials scientists, physicists, geologists and other scientists and engineers (Randle, 2009).
The crystallographic orientation of a polycrystalline sample, or texture, can be determined by electron backscatter diffraction, X-ray diffraction and neutron diffraction.
It can be outfitted for 10 or more analytical attachments including: energy dispersive X-ray spectrometer, electron backscatter diffraction, cathodoluminescence detectors, wavelength dispersive X-ray spectrometer, chamberscopes and heating/cooling sub-stages.
First presented are keynote lectures, followed by papers on deformation, including magnesium, severe plastic deformation, accumulative roll bonding and high pressure torsion, modeling, orientation gradient, experimentation research, and creep and superplasticity; deformation and annealing, including cube texture and thermo-mechanical processing; techniques, microstructure, dislocations, x-ray/neutron diffraction, recent advances, and electron backscatter diffraction measurements; annealing, with discussion of grain coarsening, recrystallization, and recovery; and materials, such as corrosion oxidation, interfaces, electrical steel, steel, titanium and zircaloy, phase transformation, shape memory, nano-structure materials, microstructural engineering, and non-metallic materials.
To study crystal growth and orientation of solar thin films, researchers can use the low kV high resolution backscatter imaging with electron backscatter diffraction (EBSD) analysis.
In a separate announcement, Oxford Instruments Analytical agreed to acquire HKL Technology A/K, a manufacturer of electron backscatter diffraction systems for the microstructural analysis of materials.
In collaboration with Sandia National Laboratory, NIST is developing procedures for analyzing the crystallographic phase of individual sub-200 nm particles utilizing electron backscatter diffraction (EBSD) in the field emission scanning electron microscope.
The dual beam microscope sought to be progressive and meet the following requirements: imaging secondary electrons and backscattered insulating samples or conductors, electronic imaging transmission (STEM), abrasion FIB insulation or conductive samples, X-ray spectrometry energy dispersive (EDS), electron backscatter diffraction (EBSD).
Unknown phases can then be identified automatically by matching the calculated patterns with the observed patterns generated using the electron backscatter diffraction technique, an increasingly popular scanning electron microscope-based technique used for the analysis of samples in materials science, geology, microelectronics and related research fields.
Recent collaborative efforts have been focused on the effect of die design and billet geometry on extrusion quality, numerical modeling of the "dead metal zone" section of an extruded part using the FEM technique, application of a microstructure characterization method called electron backscatter diffraction (EBSD) for evaluating crystallization effects in extruded material, and development of rapid tooling for extrusion production.
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