FERAM


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AcronymDefinition
FERAMFerroelectric Ram
FERAMFerro-Electric Random Access Memory
References in periodicals archive ?
FeRAM shares flash memory's ability to retain data even when not powered, and combines it with the fast operating characteristics of DRAM.
Toshiba develops world's fastest, highest density chip
Neque aliud est cur minus moleste feram priscam Scotorum linguam paulatim intermori, quam quod libenter sentiam barbaros illos sonos paulatim euanescere, et in illorum locum Latinarum vocum amoenitatem succedere.
Scots, Indians and empire: the Scottish politics of civilization 1519-1609
Mihi si haec condicio consulatus data est ut omnis acerbitates, omnis dolores cruciatusque perferrem, feram non solum fortiter verum etiam libenter, dum modo meis laboribus vobis populoque Romano dignitas salusque pariatur.
The rhetoric of politics in Cicero's fourth Catilinarian
Quanquam quid vel hoc opus erat dicere, quasi non ipso ex vultu fronteque, quod aiunt, satis quae sim prae me feram, aut quasi si quis me Mineruam aut Sophiam esse contendat, non statim solo possit obtutu coargui, etiam si nulla accedat oratio, minime mendax animi speculum" (74, 65-68).
Dutch proverbs and ancient sources in Erasmus's 'Praise of Folly.'
Restava solo da provocare il nemico, che e appunto quanto lo spinge ad insultare Pirro: Nam excitatus luctu et acerbitate mortis fili, inmanissimi hostis feram naturam maledictis in se durissimis prouocabat (I, 221, 11-13); e percio, culpat quod non hostis, sed euentus attulerat, quod non faceret nisi dolens et desiderans mori (I, 222, 2-4) (26).
Un esempio di deformatio nelle Interpretationes Vergilianae di Tiberio Claudio Donato: la lotta di Priamo contro Pirro (1)
Its principle applications are in the deposition of ferroelectric materials for FeRAM (strontium bismuth tantalate or SBT, bismuth lanthanum tantalate or BLT, and lead zirconium titanate or PZT) and high-k capacitor materials (hafnium silicate and barium strontium titanate or BST).
More memory
said Wednesday it and Infineon Technologies AG of Germany have jointly developed a ferroelectric random access memory (FeRAM) technology which provides ''the highest memory capacity yet reported'' for a FeRAM chip.
Toshiba, Infineon develop RAM with highest memory capacity
The FeRAM uses polarity to represent the desired "0" or "1" in a memory circuit.
IEDM Presents State-of-the-Art Nanotechnology
The NFC chips simplify tag design by integrating RF, signal-conditioning and host interface circuitry, as well as non-volatile 4Kbit FeRAM memory, in a compact surface-mount package.
United Kingdom : RS Components brings industry-leading NFC technology from Panasonic to wider developer community
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