FeRAM


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AcronymDefinition
FeRAMFerro-Electric Random Access Memory
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FeRAM shares flash memory's ability to retain data even when not powered, and combines it with the fast operating characteristics of DRAM.
Neque aliud est cur minus moleste feram priscam Scotorum linguam paulatim intermori, quam quod libenter sentiam barbaros illos sonos paulatim euanescere, et in illorum locum Latinarum vocum amoenitatem succedere.
Mihi si haec condicio consulatus data est ut omnis acerbitates, omnis dolores cruciatusque perferrem, feram non solum fortiter verum etiam libenter, dum modo meis laboribus vobis populoque Romano dignitas salusque pariatur.
Quanquam quid vel hoc opus erat dicere, quasi non ipso ex vultu fronteque, quod aiunt, satis quae sim prae me feram, aut quasi si quis me Mineruam aut Sophiam esse contendat, non statim solo possit obtutu coargui, etiam si nulla accedat oratio, minime mendax animi speculum" (74, 65-68).
Non-charge storage-based memories such as FeRAM and MRAM offer fast RAM-like performance along with non-volatility and extremely high endurance.
Restava solo da provocare il nemico, che e appunto quanto lo spinge ad insultare Pirro: Nam excitatus luctu et acerbitate mortis fili, inmanissimi hostis feram naturam maledictis in se durissimis prouocabat (I, 221, 11-13); e percio, culpat quod non hostis, sed euentus attulerat, quod non faceret nisi dolens et desiderans mori (I, 222, 2-4) (26).
Its principle applications are in the deposition of ferroelectric materials for FeRAM (strontium bismuth tantalate or SBT, bismuth lanthanum tantalate or BLT, and lead zirconium titanate or PZT) and high-k capacitor materials (hafnium silicate and barium strontium titanate or BST).
said Wednesday it and Infineon Technologies AG of Germany have jointly developed a ferroelectric random access memory (FeRAM) technology which provides ''the highest memory capacity yet reported'' for a FeRAM chip.
The FeRAM uses polarity to represent the desired "0" or "1" in a memory circuit.
Seminar participants will learn about common characterization and measurement techniques for a variety of established and emerging NVM technologies, including flash, PRAM, ReRAM, and FeRAM.
The NFC chips simplify tag design by integrating RF, signal-conditioning and host interface circuitry, as well as non-volatile 4Kbit FeRAM memory, in a compact surface-mount package.