FinFET


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AcronymDefinition
FinFETFin-Shaped Field Effect Transistor
References in periodicals archive ?
As the leading provider of physical IP with more than 100 test chip tapeouts on FinFET processes, Synopsys continues to make significant investments in developing IP to help designers take advantage of Samsung's latest process technologies, reduce risk and speed development of their SoCs.
United States : Synopsys Collaborates with Samsung Foundry to Develop DesignWare IP for Samsung 8-nm FinFET Process
leadership IP suppliers that can bring 28G backplane SerDes in advanced FinFET
Samsung, eSilicon and Rambus collaborate on 14nm network processor tape-out
Several cell-aware diagnosis results have been published based on technologies from 160 nm down to 14-nm FinFET.
Identifying transistor-level yield limiters in the finFET era
The difficulties arise with the FinFET technology is that, FinFET structures experiences signicant self-heating and the operating temperature in FinFET circuits varies directly with number of times the switching activity takes place.
Design of a low power multimode adder for 32-bit pipelined MIPS processor
In October, Samsung announced they are the first in the industry to enter mass production of 10nm FinFET technology, which allows up to a 30% increase in area efficiency with 27% higher performance or up to 40% lower power consumption.
Qualcomm, Samsung collaborate to advance chip design
It will be the first time the 14-nanometer FinFET process is used for a SoC aimed at midrange phones, previously only used for premium products, the company said.
Samsung to Produce 14nm SoC for Budget Models
According to Samsung, its new 14nm LPP process, incorporating three-dimensional (3D) FinFET structure on transistors, enables significant performance boost and low power consumption.
Samsung commences mass production of second generation 14nm FinFET Logic process technology
0 Design Rule Manual (DRM) certification from TSMC for its 16-nanometer FinFET Plus (16FF+) process.
Cadence Innovus implementation system certified on 16-nanometer FinFET Plus process
Time-dependent, dielectric breakdown in transistors, including those based on HKMG and FinFET technology, responds to the electric field across the gate oxide with the creation of charge traps that permit current to tunnel through the insulator.
iFail: predicting end-of-life for future mobile devices: dealing with test and measurement in the of personal electronics
Because atomic layer deposition is commonly used in industry, the new finFET technique may represent a practical solution to the coming limits of conventional silicon transistors.
Finlike design can create smaller transistors and powerful computer chips
Rambus will develop a range of high-speed memory and chip-to-chip serial link interfaces optimized for GLOBALFOUNDRIES processes, including the new 14nm-XM technology, which is the industry's first 14nm offering based on a modular FinFET technology architecture.
GLOBALFOUNDRIES and Rambus Collaborate To Develop Broad IP Portfolio for 14nm-XM FinFET Process Technology
Cadence was presented with awards for the joint development of the 7nm FinFET Plus design infrastructure and the 12nm FinFET Compact (12FFC) design infrastructure and the joint delivery of the automotive design enablement platform.
United States : Cadence Recognized with Three TSMC Partner of the Year Awards
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