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GGNMOSGrounded-Gate Negative-Channel Metal Oxide Semiconductor
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References in periodicals archive ?
Next for the RC SGTNMOS part, Figures 4(a) and 4(b) compare the TLP IV curves among the RC SGTNMOS and GGNMOS cases with the normal outer pickup ring, butting, and inserted pickups in the source diffusions.
The [V.sub.t1] value is reduced by this triggering mechanism as compared with the GGNMOS [V.sub.t1] value 5.8 V.
The ESD robustness comparisons among the GGNMOS and SGTNMOS cases further show that this SGTNMOS scheme with simple resistance/resistance-capacitance connection can relieve the nonuniform turn-on issue of the multifinger layout by 18-29%.