Pretextured samples are then ready to be anodized during the GISAXS measurements at the voltage corresponding to the lattice of the imprinted pattern.
The GISAXS measurements were performed at the SixS beamline of the Synchrotron SOLEIL in Saint-Aubin (Paris, France) using a photon energy of 18.4 keV.
An electrochemical cell was specifically designed for the GISAXS measurements (Figure 2(b)).
In comparison to conventional microscopy, GISAXS  has several advantages:
(iv) The GISAXS technique provides morphological information from the nanometer to micrometer length scales.
2D GISAXS patterns obtained from the sample annealed at 800[degrees]C are presented in Figure 3.
In this paper, we focus on the GISAXS and GIWAXS measurements on ZnO nanostructured films with nanowires.
For the presentation of GISAXS measurements performed on ZnO films, two representative samples, composed of substrates with seeding ZnO coatings and ZnO nanowires, were analyzed.
Seeding coatings were standardly analyzed by GISAXS as systems of randomly distributed nanoparticles.