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Effect of the clinical application of the GaAlAs laser in the treatment of dentine hypersensitivity.
One study combined GaAlAs at two wavelengths (650 nm/830 nm) .
[10.] Kreisler M., Christoffers AB, Willershausen B, DHoedt B (2003) Effect of low-level GaAlAs laser irradiation on the proliferation rate of human periodontal ligament fibroblasts: an in vitro study.
Effect of low-level GaAlAs laser irradiation on he proliferation rate of human periodontal ligament fibroblasts: an in vitro study.
In this study, we used an infrared GaAlAs Laser (Physio laser, RJ, Germany) with a wavelength of 810 nm (13), with an area of 1 cm2, power output of 10 mW and in continuous mode.
Intrapulpal temperature changes during root surface irradiation with an 809-nm GaAlAs laser.
The FDA217 driver output is controlled by means of the highly effective GaAlAs infrared LED at the input.
Therefore, this study was intended to investigate the alterations in BAX, Bcl-2, and IGF-1 protein expression under the irradiation of GaAlAs (810 nm; 125 mW/[cm.sup.2]; 3.75 J/[cm.sup.2]; 0.4 [cm.sup.2]; 30 s).
Currently, the light of a specific wavelength, sources which are most commonly applied in PDT are heliumneon (HeNe) lasers, (633 nm) gallium-aluminum-arsenide (GaAlAs) diode lasers (630-690, 830, or 906 nm), and argon lasers (488-514 nm).
Laser irradiation was performed with a Gallium-luminum-Arsenide (GaAlAs) [lambda]=810 nm, 30 mW (MedArt Uni-laser 201 product, Asah Medico A/S, Hvidovre, Denmark).
Newbury Park, CA, August 24, 2013 --(PR.com)-- Opto Diode (www.optodiode.com), a division of ITW, and a member of the ITW Photonics Group, introduces the OD-669-850 high-power gallium aluminum arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator.
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- GAA1 protein homolog
- GaAs FET
- Gääser Dorfverein