GaAs


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Related to GaAs: AlGaAs
AcronymDefinition
GaAsGallium Arsenide
GaAsGame as a Service
GaAsGenerally Accepted Auditing Standard
GaAsGuyot Adrien & Arnold Song (band)
GaAsGeneral Atomics Aeronautical Systems Inc
GaAsGuandong Academy of Agricultural Sciences (China)
GaAsGeneral Arts and Science (college program; Canada)
References in periodicals archive ?
Eesti Gaas will operate the vessel under a long-term charter from its parent company Infortar AS.
entity's financial statements in accordance with GAAS as promulgated by the ASB.
Indeed other groups and these authors have already shown that RAS can be used to monitor SK growth of InAs QD on GaAs [21-24] and of antimonide QD on GaAs [20, 25-30], since the QD RAS spectra considerably differ from those of layers of similar composition.
The growth of ultrathin uniform InSb thin epilayers was carried out on 4-inch semi-insulating (SI) GaAs (100) substrates using a low-pressure MOCVD method in vertical configuration by exploiting a high-speed rotating disk (180 mm diameter) reactor [31, 47].
El GaAs se estudio en la estructura zincblenda, con una constante de red optimizada de 5.66 [angstrom] (10.85 Bohr), se empleo una malla de puntos k de 6x6x6.
Abdiweli Ali Gaas has also met Prime Minister Hailemariam Dessalegn on Tuesday, it was learned.
For a first step using TCAD Silvaco software, an ATLAS code was then prepared to build this structure made up of a gold contact placed at the top of the structure, and then under that was the [Si.sub.3][N.sub.4] antireflective coating (ARC) then the InAlGaP window layer, under that was the n-type GaAs emitter, then a p-type GaAs base, AlGaAs back surface field (BSF), GaAs buffer, GaAs substrate, and finally a gold contact in the bottom of the cell.
The design parameters of the epitaxial bilayer determine the [micro]tube diameters and the [micro]tube nanowall thicknesses, since these features are controlled by the value of the lattice mismatch and by the relative thickness of InGaAs and GaAs layers.
"I have not represented Gazprom's interests in a single dispute; I have represented Eesti Gaas' interests," Joks told Estonian public broadcaster ERR.
GaAs Monolithic Microwave Integrated Circuit (MMIC) technology has matured over the years.
Technavio's analysts forecast the global GaAs devices market to grow at a CAGR of 4.14% during the period 2016-2020.
The merger agreements on the merger of Elering AS, VA[micro sign]rguteenus Valdus and Elering Gaas AS were signed on 15 December 2015.