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References in periodicals archive ?
TechNavio's report, the Global Gallium Nitride Semiconductor Devices Market 2012-2016, has been prepared based on an in-depth market analysis with inputs from industry experts.
[1] Gallium nitride (GaN): A wide band gap semiconductor that features an advantage in that it features strong resistance to voltage breakdown, compared to conventional semiconductor materials such as silicon (Si) or gallium arsenide (GaAs).
Semiconductor technology provider Microsemi Corporation (Nasdaq:MSCC) announced on Thursday the development of enhancement mode Gallium Nitride field-effect transistors (FETs) for satellites and other military power conversion, point-of-load and high speed switching applications.
The transistors used for this amplifier are made on a GaN epitaxial wafer, which was developed under the NEDO "High-Power, High-Frequency Gallium Nitride Device Project," and manufactured by Toyoda Gosei Co, Ltd.
Durham, ND, April 14, 2012 --( Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has developed a rugged transistor technology capable of surviving the industry's most severe robustness tests without significant device degradation.
The unit is optimized for high voltage applications such as testing power semiconductor devices, including diodes, FETs, and IGBTs, as well as characterizing newer materials such as gallium nitride (GaN), silicon carbide (SiC), and other compound semiconductor materials and devices.
Researchers have used zinc oxide microwires to significantly improve the efficiency at which gallium nitride light-emitting diodes (LEDs) convert electricity to ultraviolet light.
Power management devices company Efficient Power Conversion Corp (EPC) reported on Monday that it has entered into an exclusive global distribution agreement with Digi-Key Corp for its line of enhancement mode gallium nitride (GaN) power transistors.
Tokyo, Japan, Sept 12, 2005 - (JCN Newswire) - Toshiba Corporation (TSE: 6502) today announced development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of the gallium arsenide (GaAs) FET widely used in base stations for terrestrial and satellite microwave communications.
of Energy's Sandia National Laboratories, Albuquerque, N.M., have developed a novel process of growing gallium nitride on an etched sapphire substrate, called cantilever epitaxy.