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HEMTHigh Electron Mobility Transistor
HEMTHeavy Equipment Mobile Transport
HEMTHigh Electrophoretic Mobility Tyrosinase
References in periodicals archive ?
Since joining Raytheon RF Components in 1997, he has been involved in the development of Metamorphic HEMT low noise amplifier design from 1 GHz through 110 GHz.
The CMPA2735075F is a two-stage GaN HEMT high power MMIC amplifier providing a saturated RF output power of 75 watts over 2.
With the newly-developed device, by laying contact conductors around the signal circuitry, while employing a 3-D electromagnetic field analysis to optimize the placement of via-holes that penetrate the top and bottom of the chip relative to signal paths and circuits, and in addition by developing a design technology that shields against unnecessary signal radiation , and applying all of these for the first time ever in GaN HEMT circuitry, signal interference was successfully suppressed.
These three resistances are functions of the 2DEG density, interface mobility and device geometry, and make up the total HEMT resistance such that
More efficient GaN HEMT amplifiers with high output power, high-field electron velocity and high-breakdown fields are expected to replace TWTAs in communication satellites.
In addition to its GaN HEMT with the three-layer (3-layer) cap structure, Fujitsu made the two following advances in GaN HEMT technology (Figure 3).
The Cree/AWR PDK for GaN HEMT MMIC process is available now.
The aforementioned technologies were used to develop two types of GaN HEMT amplifiers, for the X band and C band.
Although wires used in ground connections reduce the amplification factor of high-frequency signals used in the C- to X-band range, in the newly-developed hybrid circuit a transistor with via holes that connect the GaN HEMT chip's surface electrode with the bottom electrode (Figure 1) is used, thus eliminating the need for ground connection wires and thereby suppressing reduction of the amplification factor of high-frequency signals.
This configuration in effect has the additional advantage that only a single negative control voltage is required for the HEMT gate and varactor diode.
6 Negative voltage: With conventional GaN HEMT transistors, applying negative voltage to the gate enables the density of the electrons just below the gate to be zero, thereby enabling the transistor's electrical current to be turned off.
Large-signal Modeling of MESFETs and HEMTs," Microwave Journal, Vol.