HEMT


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AcronymDefinition
HEMTHigh Electron Mobility Transistor
HEMTHeavy Equipment Mobile Transport
HEMTHigh Electrophoretic Mobility Tyrosinase
References in periodicals archive ?
The report provides an estimation of the production costs of the ICs, the HEMT and the package as well as the estimated selling price of the component.
Finally, a multi-cell GaN-on-Diamond HEMT the world's first was fabricated using a substrate with high heat dissipation made of single-crystal diamond.
Research is ongoing for indium-aluminum-gallium nitride (InAlGaN) HEMTs for the next generation GaN HEMT that would contribute to increased current, as InAlGaN HEMTs can increase electron density within the transistor.
3) GaN HEMTs as lateral devices make monolithic integration of multiple devices easier and more cost-effective than superjunction vertical devices--yielding a smaller total solution and a lower cost bill of material (BOM).
This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature.
Similar to the tunnel diode, the HEMT entails a special bias region for its optimum operation, needing a passive or active bias scheme.
As discussed above, the parasitic capacitance should be fully discharged/charged before the HEMT is switched on.
The complete device small/large-signal modeling for HEMTs and passive components had been built for circuit simulation.
Raytheon demonstrated a 10 x 125 [micro]m (1.25 mm) Ganon-diamond HEMT, which represented a building block--"unit cell"--for constructing power amplifier MMICs.
A new diagnostic technique was developed to investigate the electrical homogeneity of the electrically-active defect distribution in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structure constructed on Si with minimum sample preparation steps.
Though the best high frequency performances are obtained for InAlAs/InGaAs HEMT technology which is more mature [1], AlSb/InAs HEMTs are potentially excellent candidates for low-voltage, low-power consumption operation in the case of high-speed analog and digital applications [2].
The first HEMT were fabricated with GaAs channels and AlGaAs barriers [18].