The AlGaN/GaN heterostructure field effect transistors (HFETs
) have a great potential for future high-frequency and high-power applications because of the intrinsic advantages of materials such as wide band gap, high breakdown voltage, and high electron peak velocity [5, 6].
WE1E-6: Experimental Investigation of DC-RF Dispersion in AlGaN/GaN HFET
GaAs Using Pulsed I-V and Time-domain Waveform Measurements
His main research interests include RF and microwave control devices and semiconductor components such as PIN diodes, MESFETs and HFETs
TH3D-2: Invited: AlGaN/GaN HFET
Amplifier Performance and Limitations
Kuzuhara, "E-mode Buried Gate InGaP/AlGaAs/InGaAs HFETs
Fabricated by Selective Wet Etching," Electronics Letters, Vol.
The ICIR kernel function for a GaAs/A/GaAs HFET
power amplifier was derived using two-tone measurements.
In this article, high efficiency microwave IC power amplifiers operating in class AB/[F.sup.1] and employing 4.8 and 9.6 mm HFET
power devices are designed at X-band using computer-aided design methods.
The correlation between W-CDMA ACPRs and HFET
intermodulation distortions was discussed.
Another possibility that is being pursued is the utilization of digital switching or a combination of digital switching and analog DC-to-DC converters to optimize the efficiency and linearity of the amplifier by properly changing the bias voltage at the collector and base of an HBT or the drain and gate of a heterostructure FET (HFET
This has been sketched in Figure 3 to illustrate why surface-related transients in GaN devices such as HFETs
have to be fitted by stretched exponentials .
Misha, "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
," IEEE Transactions on Electron Devices, vol.
Martin, "Analysis of DC-RF dispersion in AlGaN/GaN HFETs
using RF waveform engineering," IEEE Trans.