HFET


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AcronymDefinition
HFETHeterostructure Field-Effect Transistor
HFETHighway Fuel Economy Test
HFETHeterojunction Field-Effect Transistor (physics)
HFETHeilmann-Feynman Electrostatic Theorem
HFETHuman Factors Engineering Testing
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References in periodicals archive ?
The AlGaN/GaN heterostructure field effect transistors (HFETs) have a great potential for future high-frequency and high-power applications because of the intrinsic advantages of materials such as wide band gap, high breakdown voltage, and high electron peak velocity [5, 6].
WE1E-6: Experimental Investigation of DC-RF Dispersion in AlGaN/GaN HFET GaAs Using Pulsed I-V and Time-domain Waveform Measurements
His main research interests include RF and microwave control devices and semiconductor components such as PIN diodes, MESFETs and HFETs.
TH3D-2: Invited: AlGaN/GaN HFET Amplifier Performance and Limitations
Kuzuhara, "E-mode Buried Gate InGaP/AlGaAs/InGaAs HFETs Fabricated by Selective Wet Etching," Electronics Letters, Vol.
The ICIR kernel function for a GaAs/A/GaAs HFET power amplifier was derived using two-tone measurements.
In this article, high efficiency microwave IC power amplifiers operating in class AB/[F.sup.1] and employing 4.8 and 9.6 mm HFET power devices are designed at X-band using computer-aided design methods.
The correlation between W-CDMA ACPRs and HFET intermodulation distortions was discussed.
Another possibility that is being pursued is the utilization of digital switching or a combination of digital switching and analog DC-to-DC converters to optimize the efficiency and linearity of the amplifier by properly changing the bias voltage at the collector and base of an HBT or the drain and gate of a heterostructure FET (HFET).
This has been sketched in Figure 3 to illustrate why surface-related transients in GaN devices such as HFETs have to be fitted by stretched exponentials [15].
Misha, "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," IEEE Transactions on Electron Devices, vol.
Martin, "Analysis of DC-RF dispersion in AlGaN/GaN HFETs using RF waveform engineering," IEEE Trans.