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The discharges for 100-400 Hz belong to the HiPIMS range with high-power densities above 0.5 kW/[cm.sup.2] and short duty cycles.
(As discussed in Section 3.1., all discharges take place in HPPMS mode and reach a peak power density close to or even inside the HiPIMS mode defined by Gudmundsson et al.
Minea, "Argon metastables in HiPIMS: Time-resolved tunable diode-laser diagnostics," Plasma Sources Science and Technology, vol.
Von Keudell, "Dynamic of the growth flux at the substrate during high-power pulsed magnetron sputtering (HiPIMS) of titanium," Journal of Physics D: Applied Physics, vol.
Longer deposition time in HiPIMS was used due to generally lower deposition rates .
Series of Ni-free nc-TiC/a-C:H as well as Ni-doped nc-(Ti, Ni)C/a-C:H coatings were prepared by HiPIMS and DCMS processes.
Figure 1 shows linear decrease of the total content of titanium and nickel in the case of the Ni-doped coatings prepared by DCMS (Figure 1(a)) and HiPIMS (Figure 1(b)).
Figure 3(a) shows the comparison of the lattice parameter of the Ni-free and the Ni-doped coatings prepared by the DCMS; Figure 3(b) shows the same comparison in the HiPIMS case.
Ti[O.sub.2] Films Sputtered by HIPIMS Leading to Accelerated E.
The bacterial inactivation time shown in Figure 6 for polyester surface sputtered by HIPIMS is faster compared to DC and DCP Ti[O.sub.2]-polyester sputtered surfaces .
DCP and HIPIMS Sputtering of Samples, Electronic Density, and Voltage Considerations.
The HIPIMS sputtering shown on the right hand side in Figure 7 allows the uniform sputtering of objects with complex 3D geometry due to their increased [e.sup.-]density interacting more favorably with the negatively biased substrate compared to the less dense production of ionized species shown in Figures 7(a) and 7(b) [29, 55, 56].
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