HVVFETHigh Voltage Vertical Field Effect Transistor
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Using its High Voltage Vertical Field Effect Transistor (HVVFET) architecture, HVVi Semiconductor introduced the HVV1011-035, a 35 W surface mount RF power transistor for IFF, TCAS and Mode-S applications, and the HVV1214-200, a 200 W RF power transistor for ground-based radar applications.
According to the company, the HVVFET technology's gain, efficiency and impedance performance allow designers to eliminate amplification stages in power amplifiers, reduce parts count and shrink PCB space requirements, while its ruggedness is said to allow radar and avionics designers to eliminate isolators and, in the process, reduce system weight, size and cost.
HVVi Semiconductors introduced its High Frequency, High Voltage Field Effect Transistor (HVVFET) architecture with products designed to operate from 24V to 48V and which feature low thermal resistance and high ruggedness.