IEGTInjection-Enhanced Gate Transistor
IEGTInner Eastern Group Training (Australia)
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Devices based on Toshiba's IEGT process provide the same function as an IGBT, with increased performance.
The new IEGT process achieves a low saturation voltage like that of GTOs; a wide SOA, like that of an IGBT; and excellent voltage gate drive performance like that of IGBT, combined with a high operating frequency with low loss.
In comparisons between conventional IGBT and our IGBT-7 Series devices utilizing Toshiba's new trench structure and Injection Enhanced Gate Transistor process, the new UTPT IEGT technology offers the best performance for general inverter and motor drive applications," states Brach Cox, senior business development manager, power device division, for TAEC.