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IGBTInsulated Gate Bipolar Transistor
IGBTIntegrated Gate Bipolar Transistor
IGBTImaging and Graphics Business Team
References in periodicals archive ?
Chinese IGBT market has just emerged, and IGBT has not been widely applied.
This state-of-the-art IGBT technology paves the way for industry-leading efficiency in new inverter designs," said Kevin Connor, Vice President of the Energy, Power & Interconnect Group at Richardson.
summation]] is a total IGBT switch consisting of n sectional IGBT switches T connected in parallel.
When IGBT and diode are integrated into a single chip, reverse-conducting IGBT (RC-IGBT) requires the low acceleration and high concentration process to reverse P-shape part in the collector on the backside of the thin wafer to N-shape.
ge] reaches miller plateau voltage, IGBT collector-emitter voltage [V.
The presented method is complementary to other IGBT voltage balancing methods: RC or RCD (Resistor, Capacitor, Diode) snubber [4]-[6], active clamping [7], [8] and is analogous to the presented one in [9].
They look for strongest growth from IGBTs, although power MOSFETs had the largest market share in 2013 due to its fast switching speed, near-perfect gate impedance, fast switching speed, excellent stability, and a relatively low on-state resistance.
The Global IGBT market can be divided into six segments based on application into Consumer, EV/HEV, Industrial Motor Drives, Renewable Energy, Traction, and Others.
They conduct higher currents with higher efficiencies than FETs and IGBTs, thus a combination with FETs or IGBTs creates almost an ideal switch, where the high-side-high currents, are conducted by the thyristors, and high speed switching is done with the low side IGBTs in this product," commented Dr.
The IGBT module for advanced NPC circuits reduces switching loss by producing a waveform that is closer to a sine wave than the conventional 2-level type module.
13 -- Bicron Electronics has introduced a high voltage IGBT Gate Drive solution that protects against damaging corona discharge that can severely damage ordinary transformers and their connected circuits.
The new devices are suitable for higher power capacity in comparison with conventional 2-in-1 IGBT modules, as they have been designed to realize low inductance and current balance of parallel-connected semiconductors.