IMFETInternally Matched Field Effect Transistor
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The first paper describes a 20 W, 65 percent PAE C-band IMFET.
25 om gate length high frequency process, Cree GaN DFN transistors deliver twice the PSAT efficiency and transistor gain of Gs IMFETs in a package size that is nearly 20 times smaller at comparable power levels and frequencies.
Historically, high capacity data links were limited to the use of inefficient Gs IMFETs, said Tom Dekker, director of RF sales and marketing, Cree, Inc.