IMFET

AcronymDefinition
IMFETInternally Matched Field Effect Transistor
References in periodicals archive ?
The first paper describes a 20 W, 65 percent PAE C-band IMFET.
2004 IEEE MTT-S technical program
25 om gate length high frequency process, Cree GaN DFN transistors deliver twice the PSAT efficiency and transistor gain of Gs IMFETs in a package size that is nearly 20 times smaller at comparable power levels and frequencies.
Historically, high capacity data links were limited to the use of inefficient Gs IMFETs, said Tom Dekker, director of RF sales and marketing, Cree, Inc.
United States : Cree Introduces Highest Power and Frequency Plastic Packaged GaN Transistors for Low Cost Radar and Datalinks
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