IMPATTImpact Ionization Avalanche Transit Time
IMPATTImpact Avalanche and Transit Time
References in periodicals archive ?
The carrier ionization rates in a semiconductor material are key parameters which govern the RF performance of IMPATT sources.
Schematic of the one-dimensional (1-D) model of DDR IMPATT structure is shown in Figure 1.
Kasatkin, "Varactor-compensating the Characteristic Alterations for IMPATT Oscillators," Proceedings of 11th Microwave Electronics Conference, Vol.
Gorbachov, "High Power Wideband Pulsed Millimeter-wave IMPATT Oscillators in Injection-locked Mode," Proceedings of the Institute of Radio-physics end Electronics, Vol.
The radar's 40 W peak power transmitter uses four 15 W IMPATT amplifiers that are joined with a power combiner.
WE1E-7: The Potential on InP IMPATT Diodes as High Power High Efficiency Millimeter-wave Sources: First Experimental Results H.
From 1981 to 1988, he worked at the Technical University of Munich in the field of BARITT and IMPATT device design and fabrication.
For example, the Phoenix missile uses GaAs IMPATT diodes in a cavity combiner to produce 100 W of pulse power at X-band.
Oscillator and amplifier circuits using two-terminal devices, including Gunn and IMPATT devices, are covered.
Currently, the silicon IMPATT diode is the most powerful solidstate source at W-band frequencies and is being used in several developmental high performance mm-wave systems, such as missile seekers, precision guided weapons and tracking radars.
This paper, based on a previously presented noise theory,[6] presents the production of noise at V-band using IMPATT noise sources and the results for a series of IMPATTs, and three types of waveguide cavity mounts.
Camilleri also held positions with Texas Instruments and Avantek, where he worked with GaAs MESFETs, HEMTs, IMPATTs, GUNNs and HBTs.