IMPATTImpact Ionization Avalanche Transit Time
IMPATTImpact Avalanche and Transit Time
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The carrier ionization rates in a semiconductor material are key parameters which govern the RF performance of IMPATT sources.
In [15], the planar array of IMPATT or Gunn-diodes is placed in a small distance from the total plane reflector.
Kasatkin, "Varactor-compensating the Characteristic Alterations for IMPATT Oscillators," Proceedings of 11th Microwave Electronics Conference, Vol.
This criterion includes IMPATT, Gunn and tunnel diodes.
The laboratory is now developing a solid-state 95 GHz cloud radar using a pulsed impact avalanche and transmit times (IMPATT) diode amplifier that will eventually provide estimates of cloud ice and water content in support of research into global change.
WE1E-7: The Potential on InP IMPATT Diodes as High Power High Efficiency Millimeter-wave Sources: First Experimental Results H.
From 1981 to 1988, he worked at the Technical University of Munich in the field of BARITT and IMPATT device design and fabrication.
For example, the Phoenix missile uses GaAs IMPATT diodes in a cavity combiner to produce 100 W of pulse power at X-band.
Oscillator and amplifier circuits using two-terminal devices, including Gunn and IMPATT devices, are covered.
Currently, the silicon IMPATT diode is the most powerful solidstate source at W-band frequencies and is being used in several developmental high performance mm-wave systems, such as missile seekers, precision guided weapons and tracking radars.(1) When operated with short bias current pulses of 50 to 100 ns and low duty cycle (< 1 percent), IMPATT diodes can deliver sufficiently high peak powers.(2) The present status of peak power capability of the Si IMPATT diodes is 42 W.(3) Commercially, devices are available with up to 20 W of peak power.(4)
Early oscillators involved a Gunn or Impatt diode matched in a waveguide and frequency controlled with a hollow cavity coupled to the waveguide.|1~ In order to decrease size, dielectric resonators consisting of low loss, high permittivity ceramic disks have been used.|2~ Figure 1 shows how these resonators are commonly coupled to the oscillator's active element, usually a transistor, through a microstrip line.
This paper, based on a previously presented noise theory,[6] presents the production of noise at V-band using IMPATT noise sources and the results for a series of IMPATTs, and three types of waveguide cavity mounts.