InGaAsPIndium Gallium Arsenide Phosphide
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NIST's development of accurate assessment procedures for InGaAsP will enable sharing of data between laboratories and improve predictive modeling for manufacturers of semiconductor lasers, detectors, and amplifiers.
Present projects involve examining AIGalnP, InGaAsSb and InGaAsP alloys in addition to common strained-layer (In,Ga)As/(AI,Ga) As/GaAs and (In,Ga)As/(AI,Ga)As/InP systems.
In this example, a 1550 nm wavelength bandgap InGaAsP active region is surrounded by InP material.
The microwave-to-photonic submodule consists of an InGaAsP distributed-feedback (DFB) laser diode, a glass ball lens, a YIG film optical isolator, a dielectric gradient-index (GRIN) lens and an 8 [mu]m core single-mode polarization-preserving optical fiber with its axis aligned to the output polarization of the isolator, as shown in Figure 3a.
InGaAsP lasers have exhibited room temperature CW modulation bandwidths of 25 GHz, and GaAIAs lasers have shown bandwidths greater than 10 GHz.