InGaAsP

AcronymDefinition
InGaAsPIndium Gallium Arsenide Phosphide
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NIST's development of accurate assessment procedures for InGaAsP will enable sharing of data between laboratories and improve predictive modeling for manufacturers of semiconductor lasers, detectors, and amplifiers.
NIST leads industry round-robin of photonic semiconductor characterization. (News Briefs)
Present projects involve examining AIGalnP, InGaAsSb and InGaAsP alloys in addition to common strained-layer (In,Ga)As/(AI,Ga) As/GaAs and (In,Ga)As/(AI,Ga)As/InP systems.
High speed optoelectronics
Mitsubishi Electric Corporation has already released the uncooled DFB-LDs for 85 degrees C operation, in which an InGaAsP active layer is adopted.
Mitsubishi Electric Announces the Successful Development of an Uncooled Direct-Modulated DFB-LD for 10Gb/s Optical Telecommunication
Sensors Unlimited's four new SBIR programs support the development of a dual wavelength InGaAs / InGaAsP pyrometer used to measure high temperatures; an InGaAs focal plane that is sensitive throughout the visible, near-IR, and short-wave IR wavelength bands, thus reducing the inventory of cameras needed for imaging applications; a phase sensitive focal plane array designed for use in surveillance and covert communications; and Geiger mode avalanche photodiodes for photon counting applications in the 0.
US Government Grants Sensors Unlimited Four Small Business Innovation Research Contracts; Awards Advance Pioneering InGaAs Imaging R&D
In this example, a 1550 nm wavelength bandgap InGaAsP active region is surrounded by InP material.
Mode-locked semiconductor lasers
EMCORE's solutions include: optical components for high speed data and telecommunications; solar cells and solar panels for global satellite communications; electronic materials for high bandwidth communications systems, such as Internet access and wireless telephones; MOCVD tools for the growth of GaAs, AlGaAs, InP, InGaP, InGaAlP, InGaAsP, GaN, InGaN, AlGaN, and SiC epitaxial materials used in numerous applications, including data and telecommunications modules, cellular telephones, solar cells and high brightness LEDs.
EMCORE Introduces New 40 Gbps Parallel Optical Interconnect for Commercial Applications
EMCORE's solutions include: optical components for high speed data and telecommunications; solar cells for global satellite communications; electronic materials for high bandwidth communications systems, such as Internet access and wireless telephones; MOCVD tools for the growth of GaAs, AlGaAs, InP, InGaP, InGaAlP, InGaAsP, GaN, InGaN, AlGaN, and SiC epitaxial materials used in numerous applications, including data and telecommunications modules, cellular telephones, solar cells and high brightness LEDs.
EMCORE Acquires Tecstar's Applied Solar Division to Expand Product Base in Satellite Communications
The microwave-to-photonic submodule consists of an InGaAsP distributed-feedback (DFB) laser diode, a glass ball lens, a YIG film optical isolator, a dielectric gradient-index (GRIN) lens and an 8 [mu]m core single-mode polarization-preserving optical fiber with its axis aligned to the output polarization of the isolator, as shown in Figure 3a.
A 3 to 6 GHz microwave/photonic transceiver for phased-array interconnects
Definitions (1) DWDM = Dense Wavelength Divisional Multiplexing (2) InGaAsP = Indium Gallium Arsenide Phosphide
Mitsubishi Electric Offers 10-Gbps EA Modulated DFB; Laser Diode for DWDM Transmissions Up to 50 km Enables Use of Up to 46 Wavelengths in C Band
InGaAsP lasers have exhibited room temperature CW modulation bandwidths of 25 GHz, and GaAIAs lasers have shown bandwidths greater than 10 GHz.
An introduction to fiber optics
The ML9XX19 InGaAsP(1) distributed feedback (DFB) laser diode is designed for 1550-nm, long-reach CWDM(2) communications up to 100 km, and the ML7XX19 InGaAsP Fabry-Perot (FP) laser diode meets demands for 1310-nm short-reach communications up to 2 km.
Mitsubishi Electric Drives Down Cost of High-Speed Internet Communication With New Uncooled 2.5-Gbps Laser Diodes
The Company's precision tolerance serves applications that require sub-micron mounting on silicon substrates, InP, InGaAsP and a mix of other III-V semiconductor materials.
Haleos Announces New Sub-Micron Alignment and Bonding Capability for High Volume Electro-Optic Assembly and Manufacturing
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