InGaAsP

AcronymDefinition
InGaAsPIndium Gallium Arsenide Phosphide
References in periodicals archive ?
Ahmed, "Numerical approach to field fluctuations and spectral lineshape in InGaAsP laser diodes," International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol.
Therefore, for example, InGaAsP epitaxially grown on an InP substrate is mainly used as the active layer for near-infrared LEDs with emission wavelengths of 1.00-1.70 [micro]m (0.73-1.24 eV), which includes the optical fiber communication wavelength band.
* the 1064 InGaAsP semiconductor diode laser is a soft tissue laser that has a wide range of pulsing wave settings (Technology4medicine San Clemente, USA),
Transmitter section consists of a 1310 nm INGaAsP laser in an eye safe optical subassembly (OSA) which mates to the fiber cable.
NIST is conducting an industry interlaboratory comparison of ex situ characterization of InGaAsP films on InP that are the basis of long-haul telecommunication components.
Matsuoka, "Ultra-high [f.sub.max] and [f.sub.T] InP/InGaAs Double-heterojunction Bipolar Transistors with Step-graded InGaAsP Collector," 1994 IEEE GaAs IC Symposium Digest, Philadelphia, PA, pp.
Koren, "Miniature Mach-Zehnder InGaAsP quantum well waveguide interferometers for 1.3 [micro]m," IEEE Photon.
Sullivan, "Intermodulation and Harmonic Distortion in InGaAsP Lasers," Electronic Letters, Vol.
Present projects involve examining AIGalnP, InGaAsSb and InGaAsP alloys in addition to common strained-layer (In,Ga)As/(AI,Ga) As/GaAs and (In,Ga)As/(AI,Ga)As/InP systems.[3] An exploratory effort in the growth of CdTe and related II-VI compounds[4] serves to balance the program.
In this example, a 1550 nm wavelength bandgap InGaAsP active region is surrounded by InP material.
The microwave-to-photonic submodule consists of an InGaAsP distributed-feedback (DFB) laser diode, a glass ball lens, a YIG film optical isolator, a dielectric gradient-index (GRIN) lens and an 8 [mu]m core single-mode polarization-preserving optical fiber with its axis aligned to the output polarization of the isolator, as shown in Figure 3a.
InGaAsP lasers have exhibited room temperature CW modulation bandwidths of 25 GHz, and GaAIAs lasers have shown bandwidths greater than 10 GHz.