InGaAsP

AcronymDefinition
InGaAsPIndium Gallium Arsenide Phosphide
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NIST's development of accurate assessment procedures for InGaAsP will enable sharing of data between laboratories and improve predictive modeling for manufacturers of semiconductor lasers, detectors, and amplifiers.
NIST leads industry round-robin of photonic semiconductor characterization. (News Briefs)
Present projects involve examining AIGalnP, InGaAsSb and InGaAsP alloys in addition to common strained-layer (In,Ga)As/(AI,Ga) As/GaAs and (In,Ga)As/(AI,Ga)As/InP systems.
High speed optoelectronics
In this example, a 1550 nm wavelength bandgap InGaAsP active region is surrounded by InP material.
Mode-locked semiconductor lasers
The microwave-to-photonic submodule consists of an InGaAsP distributed-feedback (DFB) laser diode, a glass ball lens, a YIG film optical isolator, a dielectric gradient-index (GRIN) lens and an 8 [mu]m core single-mode polarization-preserving optical fiber with its axis aligned to the output polarization of the isolator, as shown in Figure 3a.
A 3 to 6 GHz microwave/photonic transceiver for phased-array interconnects
InGaAsP lasers have exhibited room temperature CW modulation bandwidths of 25 GHz, and GaAIAs lasers have shown bandwidths greater than 10 GHz.
An introduction to fiber optics
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