InGaAsP

AcronymDefinition
InGaAsPIndium Gallium Arsenide Phosphide
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References in periodicals archive ?
Ahmed, "Numerical approach to field fluctuations and spectral lineshape in InGaAsP laser diodes," International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol.
Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
Therefore, for example, InGaAsP epitaxially grown on an InP substrate is mainly used as the active layer for near-infrared LEDs with emission wavelengths of 1.00-1.70 [micro]m (0.73-1.24 eV), which includes the optical fiber communication wavelength band.
Emission spectral control of a silicon light emitting diode fabricated by dressed-photon-phonon assisted annealing using a short pulse pair
* the 1064 InGaAsP semiconductor diode laser is a soft tissue laser that has a wide range of pulsing wave settings (Technology4medicine San Clemente, USA),
Diagnosis and treatment of ankyloglossia and tied maxillary fraenum in infants using Er:YAG and 1064 diode lasers
Transmitter section consists of a 1310 nm INGaAsP laser in an eye safe optical subassembly (OSA) which mates to the fiber cable.
The evaluation of CFIP Lumina in RoF networks/ CFIP "Lumina" evoliucija RoF tinkluose
NIST is conducting an industry interlaboratory comparison of ex situ characterization of InGaAsP films on InP that are the basis of long-haul telecommunication components.
NIST leads industry round-robin of photonic semiconductor characterization. (News Briefs)
Matsuoka, "Ultra-high [f.sub.max] and [f.sub.T] InP/InGaAs Double-heterojunction Bipolar Transistors with Step-graded InGaAsP Collector," 1994 IEEE GaAs IC Symposium Digest, Philadelphia, PA, pp.
InP-based HBT technology for next-generation lightwave communications
Koren, "Miniature Mach-Zehnder InGaAsP quantum well waveguide interferometers for 1.3 [micro]m," IEEE Photon.
Temporal modulation of light intensity via 1D time-variant photonic crystal structure
Sullivan, "Intermodulation and Harmonic Distortion in InGaAsP Lasers," Electronic Letters, Vol.
An eight-element, optically powered, directly modulated receive UHF fiber-optic manifold
Present projects involve examining AIGalnP, InGaAsSb and InGaAsP alloys in addition to common strained-layer (In,Ga)As/(AI,Ga) As/GaAs and (In,Ga)As/(AI,Ga)As/InP systems.[3] An exploratory effort in the growth of CdTe and related II-VI compounds[4] serves to balance the program.
High speed optoelectronics
In this example, a 1550 nm wavelength bandgap InGaAsP active region is surrounded by InP material.
Mode-locked semiconductor lasers
The microwave-to-photonic submodule consists of an InGaAsP distributed-feedback (DFB) laser diode, a glass ball lens, a YIG film optical isolator, a dielectric gradient-index (GRIN) lens and an 8 [mu]m core single-mode polarization-preserving optical fiber with its axis aligned to the output polarization of the isolator, as shown in Figure 3a.
A 3 to 6 GHz microwave/photonic transceiver for phased-array interconnects
InGaAsP lasers have exhibited room temperature CW modulation bandwidths of 25 GHz, and GaAIAs lasers have shown bandwidths greater than 10 GHz.
An introduction to fiber optics
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