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References in periodicals archive ?
An optical two input logic NAND gate and the photonic crystal are comprised of 2D-square lattice of dielectric rods are made of indium phosphide and gold rod in air substrate.
Carter et al., "High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching," in Proceedings of the 25th International Conference on Indium Phosphide and Related Materials (IPRM '13), May 2013.
According to AXT, Indium phosphide is rapidly emerging as a material of choice for both new and existing applications, including optoelectronic devices for fiber optic telecommunications, passive optical networks, and data centre connectivity, as well as solar cells and next-generation wireless amplifiers.
Yang et al., "The effect of gate metals on manufacturability of 0.1 [micro]m metamorphic AlSb/InAs HEMTs for ultra low-power applications," in Proceedings of the 20th International Conference on Indium Phosphide and Related Materials (IPRM '08), pp.
Building on indium phosphide high electron-mobility transistor (InP HEMT)(3) technology developed by Fujitsu Laboratories, Fujitsu and Fujitsu Laboratories developed a multistage amplifier that suppresses the oscillator effect while increasing the amplification ratio.
The new solution is based on EV Group's ComBond(R) technology and aims to allow highly mismatched material combinations such as gallium arsenide (GaAs) on silicon, GaAs on indium phosphide (InP), InP on germanium (Ge) and GaAs on gallium antimonide (GaSb).
In work reported in the journal Science, an international team of researchers led by a group at Lind University in Sweden learned to grow nanowires made of indium phosphide using a method catted metalorganic chemical vapor deposition, in which the nanowire crystals are built up through agglomeration of individual molecules.
The nanowires are made of the semiconductor material indium phosphide and work like antennae that absorb sunlight and generate power.
Furthermore, I am excited about the potential for LeCroy to provide an ideal commercial outlet for our unique Indium Phosphide (InP) process technology and ultra high frequency mixed signal design capabilities developed at Teledyne Scientific Company, our R&D laboratories."
RealEdge comprises a combination of new architectures, next-generation microcircuit and thin-film components, and advanced application of the company's indium phosphide semiconductor process.
The report also examines the role that indium phosphide (InP) may play in the future of photovoltaics.
SiGe technology leverages highly-reliable and mature fabrication processes associated with the 50-year-old silicon industry, but with performance levels comparable to that of exotic materials such as Indium Phosphide (InP) and Gallium Arsenide (GaAs).