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INGANIndium Gallium Nitride
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Pearce, "Effects of substrate temperature on indium gallium nitride nanocolumn crystal growth," Crystal Growth & Design, vol.
Among them, indium gallium nitride (InGaN) is the most promising material for the preparation of high-efficiency, high-power light emitting diodes (LEDs), which are employed widely in backlighting, traffic lights, headlights, and general illumination [4].
* Indium gallium aluminum phosphide (InGaAIP) and indium gallium nitride (InGaN) technologies.
The ASMT-FG10 green (530 nm) Indium Gallium Nitride (InGaN) dome LED lamp uses an untinted, non-diffused lens to provide high luminous intensity within a narrow radiation pattern.
The LEDs provide ultra violet emission based on Indium Gallium Nitride (InGaN) and red, green, blue (RGB) phosphors in the transparent resin, and differ from conventional white LEDs which typically provide blue emission with Yttrium, Aluminum, Garnet (YAG) yellow phosphors.
The blue LED, made with 470-nm indium gallium nitride, is 0.37 in.