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2.4 GHz-band ultra-low-voltage class-C LC-VCO IC in 65 nm CMOS technology, in Proceedings of the Asia Pacifc Microwave Conference (APMC 2013), 5-8 November 2013, Seoul, South Korea, 325-327.
ANALYSIS OF MAIN LC-VCO PARAMETERS FOR MULTISTANDARD TRANCEIVERS
Keywords: LC-VCO, nano electronics, CMOS technology, integrated circuits.
Main parameters comparison of LC-VCOs Straipsnis hp, nm Metai U, [F.sub.0], ?F, GHz V GHz (Sen et al.
Wang, et al., "A CMOS LC-VCO with enhanced PSR based on common-mode replica compensation," International Conference on Computer Application and System Modeling, 174-177, 2010.
3] signals, the LC-VCO can get various bias current values, which means that LC-VCO can adjust its power consumption to the optimum.
The layout of the LC-VCO, designed in 65 nm RF CMOS technology process with Cadence Virtuoso environment, is shown in Fig.
The figure of merit (FoM) of the LC-VCO can be approximately calculated from the power consumption and the phase noise in the oscillation frequency by
The FoM of this proposed LC-VCO is about -187.5 dBc/Hz at 1 MHz offset from [f.sub.osc] = 5.89 GHz.
Figure 8 shows the transient characteristics of the proposed LC-VCO at frequencies of 4.48 GHz and 5.89 GHz, when the tuning voltages [V.sub.tune] at 1.5 V and 2.5 V respectively.
Table I summarizes the performance of this LC-VCO and compares it with other previous reported LC-VCOs -.
A 4.48 GHz-5.89 GHz wideband and low phase noise LC-VCO is designed.
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