LPCVDLow Pressure Chemical Vapor Deposition
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The micropaddle is fabricated from a 519 nm thick LPCVD silicon nitride membrane window (Silson Ltd., England), with a membrane size of 0.5 mm x 0.5 mm, which is supported by a 450 [micro]m thick silicon frame of size 7.5 mm x 7.5 mm.
Chu, "Epitaxial growth of Si/SiC heterostructures with different preferred orientations on 6H-SiC(0001) by LPCVD," CrystEngComm, vol.
Polysilicon (amorphous silicon) is then deposited on the oxide layer which is serves as waveguide material by the LPCVD process.
For more information on DSI's LPCVD coatings, please read David McLean's feature article posted in DSI's online News Room titled, "Optical Thin Films on Complex Substrate Geometries."
Even so, Mo, Ta, and Ti are often deposited via LPCVD from their pentachlorides, and metal halides are often used with metal alkoxides.
2 and detailed as follows: a) Following a 2 [micro]m thick thermal oxide film growing on the 450 [micro]m thick low resistive silicon wafer, a 1000 [Angstrom] thick silicon nitride ([Si.sub.3][N.sub.4]) is deposited on the substrate using low-pressure chemical vapor deposition (LPCVD).
In this study, we synthesize uniformly distributed graphene domains on standing copper foil in a low-pressure chemical vapor deposition (LPCVD) system.
Manufactured at SPTS' Thermal Products Division in San Jose, Calif., the AVP furnace is used for a diverse range of diffusion and low-pressure chemical vapor deposition (LPCVD) applications in the semiconductor, power management, MEMS and compound semiconductor markets.
Capable of up to 2,500 cubic inches of solids accumulation, depending upon process, the robust inlet-exhaust trap is suited for 300 mm semiconductor wafer fabricators utilizing LPCVD, PECVD and ALD processing.
Silicon direct deposition techniques for thin film substrates are LPCVD (Low Pressure Chemical Vapour Deposition), PECVD (Plasma Enhanced Chemical Vapour Deposition) and the sputtering of silicon.
For its high-contrast waveguides, LioniX deposits stoichiometric silicon nitride ([Si.sub.3][N.sub.4]) using low-pressure chemical vapor deposition (LPCVD) rather than plasma-deposited SiN.