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Although both substrates share many of the same processing steps, the LTCC-M technology has advantages.
The new LTCC-M technology serves as a solution for these high performance circuits and systems.
LTCC-M substrates and their integrated components have been subjected to long-term accelerated aging tests such as temperature-humidity-bias storage (at 85 [degrees] C, 85 percent relative humidity, 50 V bias across capacitors) and thermal shock (-55 [degrees] to +125 [degrees] C) without any degradation in their electrical or mechanical properties.
A design kit for the simulation and layout of multilayer LTCC-M substrates containing embedded lumped passive components, surface transmission lines and embedded transmission lines has been developed to make this technology more accessible.
The model uses components with physical attributes such as width and length, and then all relevant dimensions are calculated based on design rules specific to LTCC-M.
Figure 5 shows an example of the validation of the LTCC-M capacitor circuit model using E M simulation.
Other LTCC-M processing techniques to further increase these Q values are being developed.
Figure 8 shows the look of a schematic entry window containing LTCC-M components.
The LTCC-M technology has been transferred to a merchant supplier, Dielectric Laboratories Inc.
Applications of LTCC-M technology range from single-cavity packages for semiconductor die to complex modules with buried passive components.
As part of the DARPA-sponsored Mixed Signal program, Sarnoff worked with TRW and DLI to demonstrate the applicability of LTCC-M technology to a direct digital synthesizer (DDS) module.
Figure 14 shows a complete transmit/receive subsystem on a single LTCC-M panel.
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