MEVVAMetal Vapor Vacuum Arc
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High purity Ti foils were cleaned in a mixture of hydrofluoric acid, nitric acid, and purified water for 5 minutes and then implanted with Ti ions at an accelerate voltages of 20 kV, to the fluence of 3 x [10.sup.17] ions/[cm.sup.2] using a metal vapor vacuum arc (MEVVA) ion source implanter.
Silver ion implantation was performed using an ion implantation machine equipped with a metal vapor vacuum arc (MEVVA) ion source.
Delplanke, University Libre de Bruxelles; and "High-quality semiconductor carbon-doped [beta]-Fe[Si.sub.2] film synthesized by MEVVA ion implantation," X.