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MISFETMetal-Insulator-Semiconductor Field-Effect Transistor
References in periodicals archive ?
The MISFET mixer includes a two section coupled-line bandpass filter for the RF port and low-pass filter at the IF output.
Experimental results of the X-band passive single-ended MISFET mixer showed a third order input intercept point as high as +33 dBm with +23 dBm LO drive.
The ultra-thin, Equivalent Oxide Thickness (EOT)(1)-scalable high-k/Ge gate stack with strontium germanide (SrGex) interlayer with high carrier mobility is a basic technology with potential for application in MISFETs at the 16nm node and beyond.