MOVPEMetal-Organic Vapor-Phase Epitaxy
References in periodicals archive ?
[5] Roberts JS, Mason NJ, Robinson M (1984) Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAs.
Hannappel, "Optical in situ monitoring of MOVPE GaSb(1 0 0) film growth," Journal of Crystal Growth, vol.
Rahimzadeh Khoshroo et al., "Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAl[O.sub.2] substrates," Journal of Crystal Growth, vol.
And multiple growth techniques for thin films, for example, molecular beam epitaxy (MBE), magnetron sputtering, metalorganic vapor phase epitaxy (MOVPE), pulsed laser deposition (PLD), and sol-gel, have been utilized.
Shimomura, "High Growth Enhancement Factor in Arrayed Waveguides by MOVPE Selective Area Growth," J.
Fabrication of the chip employs three epitaxial growth states using low pressure MOVPE on industry standard 2" diameter wafers.
( s) movpe system for gaas-based laser diodes on multiple 3 "and 4" wafers
El Jani, "Study of GaAsBi MOVPE growth on (1 0 0) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction," Microelectronic Engineering, vol.
GaN-based LED structures were grown on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE, AIXTRON, G3 2600HT).
Contract notice: Provision of an AS/P Based MOVPE Reactor.
Multijunction (MJ) solar cells (SCs) grown by metal-organic vapor phase epitaxy (MOVPE) demonstrate the highest efficiency-being one of the most successful trends of photovoltaic development [1-4].
02 Contract Notice: PURCH1317 Provision of an AS/P Based MOVPE Reactor.Tender documents available from Public Contracts Scotland.Tender returns should be submitted via Public Contracts Scotland, no paper copies will be accepted.