MQWMultiple Quantum Well
MQWMary Queen of the World
MQWMetallic Quantum Well (physics)
Copyright 1988-2018, All rights reserved.
References in periodicals archive ?
These figures exhibit that the MQW made by InAlAs/InP is associated with higher reflectivity compared to the other two MQWs.
Lee et al., "The growth of GaSb/[Al.sub.0.33][Ga.sub.0.67]Sb MQW on n-Silicon (1 0 0) with [Al.sub.0.66][Ga.sub.0.34]Sb/AlSb SPS layers," Materials Research Bulletin, vol.
The temperature dependence of 1.3- and 1.5-um compressively strained InGaAs(P) MQW semiconductor lasers.
The proposed VCSEL consists of a 1550 nm active cavity having top and bottom DBR mirror systems sitting on top of a 980 nm electrically pumped intracavity VCSEL structure made up of a 980 nm active MQW cavity with top and bottom GaAs/[Al.sub.0.8][Ga.sub.0.2]As DBR mirror systems and grown on a GaAs substrate.
A high-intensity emission peaked at around 447 nm is from the InGaN/GaN MQW active layer.
MQW lasers exhibit transfer functions from RF to light, which generally offer good linearity, but adequate dynamic range for applications in cellular and cordless systems requires further improvement in this linearity parameter.
The multiple quantum well (MQW) layer is simplified as the interface between the two GaN layers, and the effect of the backside reflector is taken into account by applying their reflectance spectra as the surface property of the backside of sapphire substrate.
However, in conventional planar epilayers, the InGaN/GaN multiple quantum well (MQW) contains large strain, which would induce a high dislocation density and piezoelectric field, due to the mismatches in lattice constant and thermal expansion between heteroepitaxial layers.
The LED structure consisted of a low-temperature 200 nm thick GaN buffer layer, a 2 [micro]m thick undoped GaN layer, a 2 [micro]m thick and highly conductive n-type GaN layer, an InGaN-GaN multiple-quantum-well (MQW) active layer, and a 0.5 [micro]m thick p-type GaN layer.
first reported thestrongquantum-confined Stark effect (QCSE) in Ge/SiGe multiple quantum well (MQW) structure grown on Si substrate [3].
California Eastern Labs has announced a series of 2.5G and 10G Electro-Absorption Modulator MQW DFB laser diode modules from NEC.
Current projects are on field theory-based optimization techniques for microwave and millimeter-wave filters using a novel combination of rigorous field solvers and generic circuit prototypes, numerical analysis and optimization of reverberation chambers, numerical field analysis of optical MQW rib waveguide structures in travelling wave photodiodes and their integration with passive uniplanar microwave and millimeterwave antennas, LTCC-based miniaturized antennas, photonic band gap structures for guiding and filtering electromagnetic waves at nanometer wavelengths, numerical analysis of plasmon resonances, together with the study of left-handed media.