MQWMultiple Quantum Well
MQWMary Queen of the World
MQWMetallic Quantum Well (physics)
References in periodicals archive ?
The proposed VCSEL consists of a 1550 nm active cavity having top and bottom DBR mirror systems sitting on top of a 980 nm electrically pumped intracavity VCSEL structure made up of a 980 nm active MQW cavity with top and bottom GaAs/[Al.
For an MQW laser operating in a quasi-linear mode, the weakly nonlinear characteristics of a linearizing predistorter are accurately modeled using a Volterra series.
The group's project on MQW rib waveguide structures and integration with uniplanar microwave circuits sets out to characterize transitions between photonic waveguide structures and coplanar transmission lines for highly integrated microwave/optical front-ends.
Work on the development of MQW lasers and high speed photodetectors at long wavelengths has also been completed in China, where fibre communications are becoming an important issue with applications in metropolitan networks and public communication networks throughout the nation.
QPI's SAF Gain Chip features MQW chip design optimized for C and L-band laser wavelengths.
QPI's FP Laser Diode features MQW chip design optimized for C and L-band laser wavelengths.
The AlGaInAs/InP MQW high-speed un-cooled 10 Gb/s FP & DFB laser diode chips feature a low operation current and a high quality eye diagram meeting OC192 SONET specifications.
In the MQW structure the active layer of the laser diode is a laminated structure comprising quantum well layers and barrier layers with a thickness of several nanometers.
Infineon's ATM transceivers provide highly reliable logic-to-light, serial data transmission over single-mode fiber using 1300nm MQW (Multi-Quantum Well) laser diode (FP) and 1300nm InGaAs PIN photodiodes.
A strained MQW structure with a non-absorbing window and proprietary facet passivation method is utilized to achieve excellent device reliability.
State-of-the-art MQW (multi-quantum well) lasers provide highest MTBF and perform over a wide range of temperatures.
The InGaN MQWs grown on A-Sapph(TM) and the bulk sapphire reference exhibited comparable photoluminescence intensity indicating that III-nitride materials grown on A-Sapph(TM) substrates have sufficient optoelectronic performance to fabricate LED devices.