MRAMSMars Regional Atmospheric Modeling System (computerized atmospheric simulation)
References in periodicals archive ?
The MRAMs are used by the Nadir and Occultation for MArs Discovery (NOMAD) instrument on the TGO.
Cobham MRAMs were chosen due to the part's access time, data retention and footprint, as well as radiation performance.
Varios proyectos de exploracion de Marte de la NASA, incluyendo los Mars Exploration Rovers (Spirit y Oportunity) (Rafkin et al., 2003), el aterrizador Phoenix (Tamppari et al., 2008), el rover Curiosity (MSL) (Vasavada 2012; Chen et al., 2010), el aterrizador InSight y el rover Mars 2020, han utilizado MRAMS para estudiar una amplia variedad de circulaciones atmosfericas.
Para simular el entorno meteorologico de la mision MSL, el modelo MRAMS ha sido configurado con siete mallas anidadas centradas sobre la zona de aterrizaje dentro del crater Gale (Figura 1).
Kawasaki and Tokyo, Japan, Feb 12, 2009 - (JCN Newswire) - NEC Corporation and NEC Electronics Corporation today announced the successful operational demonstration of a 32Mb MRAM (Magnetic Random Access Memory) that can be embedded in SoCs.
The two companies have reduced the area of control circuits in the 32Mb MRAM design in order to achieve superior cell efficiency(2) that enables 73% of a memory macro's area to be allocated to memory cells.
They will initially focus on MRAMs with a memory capacity of 256 megabits, the same capacity as the mainline DRAMs
A number of major overseas chipmakers are also working on MRAMs. Motorola has already developed a prototype lower-capacity MRAM, and IBM and Infineon Technologies have begun joint development.
Cobham Semiconductor Solutions announces QML V certification of their non-volatile products using Magnetoresistive Random-Access Memory (MRAM) intellectual property from Everspin Technologies, Inc.
"Using an IP license from Everspin, Cobham has taken commercial MRAM technology and enhanced the IP for specialized aerospace and defense applications.
This successful MFF demonstration, however, provides insight into how the above issues can be solved by using MFFs and MRAMs that require 1.2 V or less and have unlimited write endurance.
Network solutions provider NEC Corporation (Nasdaq:NIPNY) announced on Friday (30 November) that it has succeeded in developing a new SRAM (static random access memory)-compatible MRAM (magnetoresistive random access memory) that can operate at 250MHz, the world's fastest MRAM operation speed.