Kawasaki and Tokyo, Japan, Feb 12, 2009 - (JCN Newswire) - NEC Corporation and NEC Electronics Corporation today announced the successful operational demonstration of a 32Mb MRAM (Magnetic Random Access Memory) that can be embedded in SoCs.
The two companies have reduced the area of control circuits in the 32Mb MRAM design in order to achieve superior cell efficiency(2) that enables 73% of a memory macro's area to be allocated to memory cells.
They will initially focus on MRAMs with a memory capacity of 256 megabits, the same capacity as the mainline DRAMs
A number of major overseas chipmakers are also working on MRAMs. Motorola has already developed a prototype lower-capacity MRAM, and IBM and Infineon Technologies have begun joint development.
This successful MFF demonstration, however, provides insight into how the above issues can be solved by using MFFs and MRAMs
that require 1.2 V or less and have unlimited write endurance.
Network solutions provider NEC Corporation (Nasdaq:NIPNY) announced on Friday (30 November) that it has succeeded in developing a new SRAM (static random access memory)-compatible MRAM
(magnetoresistive random access memory) that can operate at 250MHz, the world's fastest MRAM