MTJ

(redirected from Magnetic Tunnel Junction)
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AcronymDefinition
MTJMagnetic Tunnel Junction
MTJMobile Tools for Java (Eclipse DSDP Project)
MTJMyotendinous Junction
MTJMulti Jet
MTJMontrose, CO, USA - Montrose County Airport (Airport Code)
MTJMissourians for Tax Justice
MTJMaximum Tolerable Jitter
MTJMulti-Tone Jamming
References in periodicals archive ?
Such magnetic tunnel junctions can be also used to store synaptic weights.
Recently, we performed a precise Fano factor measurement of the MgO-based magnetic tunnel junction (MTJ) devices.
3 Magnetic tunnel junction (MJT):A tunnel junction that uses the magnetoresistive effect.
Jonker, "Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions," Nano Letters, vol.
Recently, interest in the magnetic tunnel junction (MTJ) which uses a thin dielectric spacer (e.g., MgO) as is shown in Figure 1(a) is rapidly growing because it may overcome the limitation of small power in giant magnetoresistance (GMR) devices.
Schematic illustration of an magnetic tunnel junction magnetic RAM device (above) reveals how magnetoresistance can be used for different applications.
Early evaluators of EXIM have explored its unique capabilities to form multi-layer magnetic tunnel junction (MTJ) stacks for spin-transfer-torque magnetoresistive random access memories (STT-MRAM).
In the case of magnetic tunnel junctions with an insulating barrier between the two spin-polarized metallic layers or if there is no exchange coupling between the layers, the spin-tunneling magnetothermopower, [S.sub.T], can be written as [16]
They discuss magnetic memories and STT, magnetic tunnel junctions (MTJs), STT MRAMs, hybrid MTJ-CMOS digital circuits, nonvolatile computing with STT MRAMs, STT-based all spin logic, and nonvolatile computing with all spin information processing.
MAGICAL will demonstrate that these limitations can be largely overcome through hybrid CMOS/magnetic technology.The project will follow three main goals:- Firstly, we will strengthen the STT-MRAM technology by investigating two novel ideas aiming at solving two remaining difficulties in sub-20nm STT-MRAM development: the nanostructuration of magnetic tunnel junctions and the long-term data retention.
Consequently, the content of the book is divided into six parts mostly focusing on specific materials and structures with extensive cross-references between chapters to reflect the fact that the discoveries in one class of materials may be directly relevant to the breakthroughs in seemingly unrelated systems." After a historical overview, coverage in 38 chapters encompasses magnetic metallic multilayers, magnetic tunnel junctions, semiconductors, the nanoscale, and applications.
The 16 oral and poster papers cover dilute magnetic semiconductor and oxides, magnetic resistive RAM, single-spin dynamics/DMS I, spintronics materials, magnetic tunnel junctions and dynamics, spintronics transport and imaging, and multi-ferroic materials and oxides.