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NMOSNegatively Doped Metal Oxide Semiconductor
NMOSNegative Channel Mos
NMOSNegative Metal Oxide Semiconductor
NMOSNegative-Channel Metal Oxide Semiconductor
NMOSNecessary Military Occupational Specialty (US Marine Corps)
NMOSNetwork Management Operating System (Riversoft)
NMOSNetwork and Mission Operations Support
NMOSNational Moment of Silence
NMOSNATO Maritime Operations Intelligence System
NMOSNitrous Metal-Oxide Semiconductor
References in periodicals archive ?
The pole frequency of the NMOS and PMOS shifters are measured as 9.
The duty cycle D is the fraction of the commutation period T during which the NMOS switch (Si) is on.
NMOS mobility in the (111) and (331) surface was greater than in the (110) surface, and while the center of the gate is still a (110) surface, overall on-current is increased by 10%.
25 [micro]m 1P5M CMOS process, the NMOS transistor has a drain-source breakdown voltage of approximately 5.
The main advantage CMOS has over NMOS and bipolar technologies is its much smaller power dissipation.
In the production of NMOS the aim is to obtain the minimum channel in L, the minimum overlap [DELTA]L, the optimal channel width B, the set output characteristic [U.
For the NMOS device, the new technology uses a conventional double-layer gate-electrode structure consisting of a nickel-silicide[4] layer and a silicon layer, but adds impurities to the silicon layer.