OBD

(redirected from Oxide Breakdown)
Category filter:
AcronymDefinition
OBDOn Board Diagnostics
OBDOut Bound Delivery (sales)
OBDOn-Board Diagnosis
OBDOffice Binder
OBDon Board Device
OBDObject Based Disk
OBDon Board Diagnose
OBDOnline Bugs Database
OBDOnline Business Development
OBDOptimum Bed Density (pharmaceutical manufacturing)
OBDOpioid Bowel Dysfunction (gastrointestinal side effect)
OBDOrganization of Black Designers
OBDOverboard (Swedish punkrock band)
OBDOmaha by Design (University of Nebraska; Omaha, NE)
OBDOpposed Blade Damper (mechanical)
OBDOff-Board Diagnostics
OBDOld Bank District (Los Angeles, CA)
OBDOff Broadway Dance
OBDOverboard Discharge
OBDOccupied Bed Day
OBDOrganic Brain Disease
OBDOxide Breakdown
OBDOut of Battery Discharge
OBDOrdnance Base Depot
OBDOrder of Benefit Determination (insurance)
OBDOutboard Divertor
OBDOrthonormal-Basis Diversity
OBDOrder by Description
OBDOSS&E (Operational Safety, Suitability and Effectiveness) Baseline Document (US Air Force)
OBDOptimal Bit Decision
OBDOff Board Drone
OBDOpiate-Induced Bowel Dysfunction
Copyright 1988-2018 AcronymFinder.com, All rights reserved.
References in periodicals archive ?
The I-V data (normalized to gate area and oxide thickness) show a high electric field required for oxide breakdown (Ebkd = 7.1 MV/cm) (under accumulation or substrate injection condition), while the resistivity window before and after hard breakdown can be as high as 10 orders of magnitude (for Eg [less than or equal to] 2 MV/cm).
After linear fitting of the experimental I-V data (only for the HRS condition just before oxide breakdown or conductive filament formation), PF and FN mechanisms were confirmed as the main conduction models with specific trap/barrier energy levels [[PHI].sub.t]/[[PHI].sub.B] for [Al.sub.2][O.sub.3] [8].
The V-ramp test applies a linear voltage ramp; the J-ramp test applies an increasing logarithmic current ramp until oxide breakdown. The V-ramp test begins at a low oxide voltage so it is better at detecting low electric field failures, but it provides poor resolution at high electric fields.
Extracted J-ramp oxide breakdown parameters include VBD and [Q.sub.BD].
Again, the instrument's math and spreadsheet functions are used to extract J-ramp oxide breakdown parameters.
Failures can be manifested in high leakage currents, lifetime reductions, premature gate oxide breakdown, or formation of inversion layers.