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OBDOSS&E (Operational Safety, Suitability and Effectiveness) Baseline Document (US Air Force)
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OBDOpiate-Induced Bowel Dysfunction
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References in periodicals archive ?
The I-V data (normalized to gate area and oxide thickness) show a high electric field required for oxide breakdown (Ebkd = 7.1 MV/cm) (under accumulation or substrate injection condition), while the resistivity window before and after hard breakdown can be as high as 10 orders of magnitude (for Eg [less than or equal to] 2 MV/cm).
After linear fitting of the experimental I-V data (only for the HRS condition just before oxide breakdown or conductive filament formation), PF and FN mechanisms were confirmed as the main conduction models with specific trap/barrier energy levels [[PHI].sub.t]/[[PHI].sub.B] for [Al.sub.2][O.sub.3] [8].
The V-ramp test applies a linear voltage ramp; the J-ramp test applies an increasing logarithmic current ramp until oxide breakdown. The V-ramp test begins at a low oxide voltage so it is better at detecting low electric field failures, but it provides poor resolution at high electric fields.
Extracted J-ramp oxide breakdown parameters include VBD and [Q.sub.BD].
Again, the instrument's math and spreadsheet functions are used to extract J-ramp oxide breakdown parameters.
Failures can be manifested in high leakage currents, lifetime reductions, premature gate oxide breakdown, or formation of inversion layers.