Devices consisted of the architecture ITO/PEDOT:PSS/ P3HT
:PffBT4T-20D or P3HT
Patterned polymeric EC devices using P3HT
(Sigma-Aldrich) as an active component were fabricated on glass substrates coated with indium-tin-oxide (ITO) via both negative and positive patterning processes of the polymer.
Parisi, "Physical origin of the impact of different nanocrystal surface modifications on the performance of CdSe/ P3HT
hybrid solar cells," The Journal of Physical Chemistry C, vol.
Thus, while a larger part of the solar spectrum can be harvested with these DPP-based devices (as compared to, e.g., those based on PCBM/P3HT that have their main P3HT
absorption only until 675 nm) , the output is not proportionally increased.
The inner diameter of the glass capillary was approximately 100 [micro]m and 50 [micro]m for the deposition of PEDOT:PSS inks and the P3HT
:PCBM ink, respectively.
The examined device includes a 100-nm-thick film of poly(3-hexylthiophene) (P3HT
) and [6,6]-phenyl-[C.sub.61]-butyric acid methyl ester (PCBM) blend as the active layer, and a 7-nm Mo[O.sub.3] film as the hole transporting layer.
By incorporating Ag nanoprisms into P3HT
:PCBM active layer and further studying the surface plasmon Raman spectrum (SERS) to better study the plasmonic-enhanced OSCs , it is found that the Raman intensity of polymer (active layer) will be drastically enhanced if the plasmonic peak of the metal nanomaterials incorporated into the active layer matches well with the laser wavelength of the Raman instrument.
Chang, "Modeling and design of Ag, Au, and Cunanoplasmonic structures for enhancing the absorption of P3HT
:PCBMbased photovoltaics," IEEE Photonics Journal, vol.
The bulk heterojunction organic layer with a blend of Poly (3-hexylthiophene) (P3HT
) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) was spin coated at a low spinning rate of 400 rpm on top of the ZnO nanorod array structure.
The cell will start with PCBM ([6,6]-phenyl-[C.sub.61]-butyric acid methyl ester) as an acceptor and P3HT
[poly(3-hexylthiophene)] as the donor and utilize PEDOT:PSS [poly(3,4-ethylene-dioxythiophene) poly(styrenesulfonate)].
For example, high molecular weight poly-3-hexylthiophene (P3HT
) transistors exhibited an average saturation regime mobility > 0.02 [cm.sup.2]V-1s-1, which is comparable to the best mobilities observed for transistors of this material prepared using other methods.