PAMBEPlasma-Assisted Molecular Beam Epitaxy (method of crystal growth)
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[beta]-[Ga.sub.2][O.sub.3] thin films were grown on single-side polished c-plane sapphire substrates by PAMBE in an oxide MBE chamber.
Five samples of M-plane GaN thin film, labeled as samples A, B, C, D, and E, were grown on LAO substrates by PAMBE system with standard effusion cell for Ga evaporation (99.9995% purity) and ultra-high pure nitrogen gas (99.9999% purity) supplied in a radio-frequency plasma source (Veeco model GEN 930).