After 30 min of fertilization, when the 50% of the eggs released the first polar body, triploid was induced by inhibiting the release of the polar body II (PBII
) with 450 [micro]mol/mL 6-deimethylaminopurine (6-DMAP) for 20 min.
Currently, there have been no reports of the deposition of DLC film doped with different silicon and silicon-nitrogen ratios using the PBII technique, aimed at comparing the mechanical properties and corrosion resistances.
A schematic of the plasma-based ion implantation (PBII) apparatus is shown in Figure 1 [18-20].
All silicon substrates were prepared by sputter-cleaning and then interlayer deposition using PBII apparatus.
The pure DLC, Si-DLC, and Si-N-DLC films were prepared using the PBII technique.
Elemental doped diamond-like carbon films (silicon, silicon-nitrogen) were prepared on Si (100) wafers using the PBII technique.
Liao, "The effect of negative bias pulse on the bonding configurations and properties of DLC films prepared by PBII with acetylene," Diamond and Related Materials, vol.
Junho, "Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering," Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol.
Watanabe, "Deposition and tribological properties of sulfur-doped DLC films deposited by PBII method," Advances in Materials Science and Engineering, Article ID 958581, 7 pages, 2010.