PETEOSPlasma Enhanced Tetraethylorthosilicate
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A M0RI(TM) chamber was used to etch 30nm contact holes as deep as 633nm in PETEOS oxide.
The DxZ chamber performs an in situ integrated process sequence of PETEOS and SACVD films -- uniquely combining the gap-fill SACVD and cap layer PECVD in a simple, one-step, one chamber deposition process.
The new system uses a proprietary multiple-station architecture for continuous processing of several wafers at one time, enabling exceptionally high throughput of up to 60 wafers per hour (6000A blanket PETEOS film removal), a 3-fold increase over the CMP market's current leading supplier.