PM-HEMTPseudo-Morphic High Electron Mobility Transistor
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This last point is an important one, specifically when comparing the PM-HEMT to the more exotic, but far less reliable and more costly inP based HEMT structures.
Figure 2 shows a typical calculated sheet charge density as a function of position and gate bias for an assumed PM-HEMT structure.
Nevertheless, because of the PM-HEMT's inherent performance advantage, the lower circuit yield can often be offset by adoption of a more conservative design approach than would be feasible for MESFET-based MMICs.