QCSEQuantum Confined Stark Effect
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Due to the strong piezoelectric and spontaneous polarization fields along the caxis of GaN which were attributed to the dipole and stress asymmetry, the polar c-plane GaN-based quantum wells (QWs) suffered from quantum-confined stark effect (QCSE) in the growth direction.
first reported thestrongquantum-confined Stark effect (QCSE) in Ge/SiGe multiple quantum well (MQW) structure grown on Si substrate [3].
index perturbation [delta]n [10.sup.-3] will be attained at E 10/[mu]m in the Pockels materials, while [delta]n 5 X [10.sup.-3] would be reached in the quantum-confined Stark effect (QCSE).