They built their device out of electrons moving through a series of structures known as quantum wells
Na et al., "Effect of growth interruption on In-rich InGaN/GaN single quantum well
structures," Physica Status Solidi (C), no.
Ketzer et al., "Origin of the "green gap": increasing nonradiative recombination in indium-rich GaInN/GaN quantum well
structures," Physica Status Solidi (C), vol.
Room temperature light-emitting diodes have been built in porous silicon (0.6 [mu]m), in erbium-doped silicon (1.54 [mu]m) and in strained SiGe multiple quantum wells
This may be attributed to the reduction of the quantum well
thickness and/or the In composition near the dislocation positions.
Kawakami, "Strain relaxation effect by nanotexturing InGaN/ GaN multiple quantum well
," Journal of Applied Physics, vol.
For a quantum well
of width 2L, the potential is (Figure 2)
Now, the researchers are looking into what happens to this chaotic behavior when two quantum wells
are coupled together.
In the present work, the binding energy of a polaron confined in a GaAs/[Ga.sub.1-x][Al.sub.x]As quantum well
wire is calculated within the framework of the variational and Lee-Low Pines approach.
Isella et al., "Ge/SiGe multiple quantum well
photodiode with 30 GHz bandwidth," Applied Physics Letters, vol.
Ballard et al., "Progress in quantum well
solar cells," Thin Solid Films, vol.
These layers -- no more than 40 atoms thick -- serve as quantum wells
, which confine electrons within their boundaries.