References in periodicals archive ?
Park et al., "Excellent selector characteristics of nanoscale V[O.sub.2] for high-density bipolar ReRAM applications," IEEE Electron Device Letters, vol.
An important issue in the development of ReRAM has been the reduction of current required to erase memory.
Conventionally, ReRAM devices have been formed from nickel oxide (NiO) films.
By utilizing this new material, Fujitsu Labs created a prototype ReRAM device that features low fluctuation of resistance value, even during high-speed operation.
Acronyms browser ?
Full browser ?
- Rerberg, Ivan
- Rerberg, Ivan Ivanovich