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References in periodicals archive ?
Hence, the surface recombination rate [U.sub.s] can be defined at the inner edge of the surface space charge region and is related to the effective surface recombination velocity [S.sub.eff] through
Using (2), the effective surface recombination velocity can then be obtained from
where [S.sub.p] is the surface recombination velocity of holes.
In this work, the gated-diode method is used to identify the interface-trapped charge density ([N.sub.it]), the surface recombination velocity ([s.sub.o]), and the minority carrier lifetime ([[tau].sub.FIJ]) in the field-induced depletion region for the nMOSFET devices using Hf[O.sub.2] gate dielectrics annealed at 500[degrees]C.
The simulation results show that a positive [DELTA][Eg.sup.BF] can bring out an inner electric field to reduce back-surface recombination velocity and overcome the front barrier built up by [DELTA][Eg.sup.Front].
Because the bulk lifetimes of these samples used in the study were about the same, the increase in effective lifetime as measured was attributed to a reduction in surface recombination velocity [24].
where [[tau].sub.p] is the minority carrier lifetime limited by precipitates, D is the minority carrier diffusion length in silicon, and s is the carrier recombination velocity at the precipitate surface.
According to Fisher formula the effective rear surface recombination velocity (Seff) can be written as
At the CIGS/Mo interface, it would be desirable to keep the photoelectron away from this interface, which is expected to have a relatively high recombination velocity. By using a very thin layer rich in gallium (Ga) at the CIGS/Mo interface, commonly called back-electron reflector (EBR), we can keep the high conductivity for the majority holes and at the same time reflect the minority electrons.
where W is the sample thickness and S is surface recombination velocity. In order to study the surface passivation of ALD Ti[O.sub.2] thin films, we used FZ n-type Si substrate which has very large bulk lifetime.
Moreover, the base device shows an efficiency of about 17.46% assuming an ohmic contact with an infinite surface recombination velocity of 1 x [10.sup.7] cm/s (Figure 5).