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SIMOXSeparation by Implantation Of Oxygen
SIMOXSilicon Implanted Oxide
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References in periodicals archive ?
Figure 1 is the high temperature pressure sensor gauge Chip based on SIMOX SOI wafer.
With regard to the SIMOX technology, the relatively immature state of modeling silicon-on-insulator (SOI) devices poses a significant challenge.
SOI substrates have been fabricated by either oxygen implant/anneal (SIMOX) or bond/etch back (BESOI) techniques.
Ibis Technology Corp, a US-based supplier of equipment for the semiconductor industry, has licensed from IBM the right to manufacture and sell SIMOX-SOI (Separation by IMplantation of OXygen / Silicon-On-Insulator) wafers based on IBM's proprietary SIMOX process.
Semiconductor technology demands that ICs be built out of low-defect silicon, and it took time for this SIMOX (Separation by IMplantation of OXygen) approach to reduce defect densities sufficiently.