SSDOIStrained Silicon Directly on Insulator
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IBM is the first to fabricate transistors using ultra-thin SSDOI structures that bypass this SiGe layer, thereby providing high electron mobility while eliminating material and process integration problems.
The SSDOI structure was created by transferring strained Si grown epitaxially, or layer by layer, on relaxed SiGe to a buried oxide layer.
IBM will present details of the innovative techniques in two papers, titled "Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs" and "High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations" at the International Electron Devices Meeting (IEDM) held in Washington, D.C.