SSDOIStrained Silicon Directly on Insulator
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IBM is the first to fabricate transistors using ultra-thin SSDOI structures that bypass this SiGe layer, thereby providing high electron mobility while eliminating material and process integration problems.
The SSDOI structure was created by transferring strained Si grown epitaxially, or layer by layer, on relaxed SiGe to a buried oxide layer.
IBM's SSDOI paper indicated that more than 1% tensile strain is needed to enhance hole mobility, and we think that this should be visible with TEM analysis", commented James.