uses stable magnetic energy to store memory directly on the chip, so we'll be able to create high-density, high-speed memory with low power requirements.
memory is close to commercialization, and we see non-volatile spin logic as the logical next step in our research and development roadmap.
Eugene Chen of Grandis, development work has covered STT-RAM
materials and processes, as well as STT-RAM
architecture and circuit blocks.
One patent discloses the use of charge pumps to provide boosted voltages to the transistor selection devices in STT-RAM
bit-cells, enabling significantly smaller cell size and higher density.
Since Grandis' new licensees are often not familiar with fabricating MTJ elements and do not possess the associated fab equipment and know-how, the MTJ Fab's main purpose is enable licensees to incorporate Grandis' MTJ elements into their CMOS wafers at the earliest possible stage in the development cycle, thereby accelerating their STT-RAM
development and reducing their time-to- market.
We are extremely pleased that STT-RAM
has been recognized by major semiconductor companies as the leading memory solution for the 45 nm technology node and beyond, and we are honored by this additional recognition and significant funding from DARPA," stated Farhad Tabrizi, CEO and President of Grandis.
is a next-generation, non-volatile memory (NVM) solution that overcomes the limitations of conventional magnetic RAM (MRAM) technologies.
co-founder and chief technology officer of Grandis stated, "It is an honor that our STT-RAM
technology has been recognized by the NIST.
With its ability to combine the high speed of SRAM and high density of DRAM and Flash, Grandis' STT-RAM
technology has the potential to replace conventional technologies as a universal memory solution for numerous consumer applications," stated Kasthuri Jagadeesan, research analyst at Frost & Sullivan.
The new patents cover STT-RAM
bit-cell technology advancements -- including bit-cell circuitry integration and the use of novel materials and structures -- which are key to enabling denser, less expensive non-volatile memory (NVM) devices that consume less power.
To date, the NSF has awarded Grandis approximately $700,000 in grants to develop its STT-RAM
the pioneer in spin-transfer torque memory (STT-RAM
) development, today announced the first magnetic tunnel junction (MTJ) fabrication facility (Fab) in the United States dedicated to STT-RAM