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References in periodicals archive ?
Furthermore, Furuya Metal's ruthenium targets have received high recognition in mass-production prototypes for the next-generation semiconductor memory known as spin-transfer torque magnetoresistive random-access memory (STT-MRAM)*1.
Wang, "All-magnonic spin-transfer torque and domain wall propagation," Physical Review Letters, vol.
A spin-transfer torque magnetic random-access memory (STT-MRAM) comprises a stack of thin magnetic layers.
The solution is designed for testing STT-MRAM (spin-transfer torque magnetoresistive random-access memory) devices that are used in super-low-power electronic systems, such as electronic appliances where it is necessary to reduce carbon emissions.
In the long-term, Yole says, spin-transfer torque magnetoresistive RAM (STTMRAM) is sure to be the only candidate to substitute DRAM thanks to its high endurance.
Additional sections cover post-CMOS device concepts and the future of micro and nanoelectronics, including spin-transfer torque magnetoresistive random-access spintronics-straintronics and nanoionic switches, and elements of carbon electronics and solutions based on graphene and carbon nanotubes.
Spin-torque oscillator (STO) is a promising new device which is based on the spin-transfer torque (STT) effect in magnetic multilayered nanostructure.
Currently, magnetic memory is based on a technology called spin-transfer torque (STT), which uses the magnetic property of electrons - referred to as spin - in addition to their charge.
After introducing semiconductor memories in general, they cover phase change memory, spin-transfer torque random access memory, resistive random access memory, memristors, and the future of nonvolatile memory.
Japanese electronic and electrical products manufacturer Toshiba Corporation (Tokyo:6502) (LSE:TOS) is to collaborate with memory semiconductor supplier Hynix Semiconductor Inc (KRX:000660) on the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), the two companies announced today.
This new discovery will be particularly significant in reducing the chip area of spin-transfer torque magnetic random access memory (STT-MRAM), making its commercialization more practical.
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