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References in periodicals archive ?
The QDs were grown by the Stranski-Krastanov mode with the InAs coverage of 2.1 monolayers (ML) at a substrate temperature of ~500[degrees]C.
Khoshakhlagh et al., "III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs," Applied Physics Letters, vol.
Fouckhardt, "Dense lying GaSb quantum dots on GaAs by Stranski-Krastanov growth," in Proceedings of the Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, USA, January 2011.
The second type is called epitaxial QD's, which are self-assembled nano- crystallites, grown with molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) process in the Stranski-Krastanov growth mode [12,13].
The fabrication of these QDs is based on a self-assembled growth technique called Stranski-Krastanov. Initially this involves the growth of a two-dimensional layer, namely the wetting layer.
This system is known to follow classical Stranski-Krastanov growth, where three-dimensional islands grow on top of one or more Cu monolayers.
Kaizu, "Stranski-Krastanov growth of InAs quantum dots with narrow size distribution," Japanese Journal of Applied Physics, vol.
In the growth of Ge on Si films, the formation of a rough surface is mainly due to the dislocations threading up to the surface, the strain in the film [21, 37], and the Stranski-Krastanov growth mechanism [8].
One of them is the Stranski-Krastanov growth that produces self-assembled Gencs on foreign substrates or in Ge/Si superlattice structures [6, 7], while the other one forms crystallites via a classical nucleation process and the produced Ge-ncs are dispersed in a matrix composed of high band gap materials.
Eberl, "Modified Stranski-Krastanov growth in stacked layers of self-assembled islands," Applied Physics Letters, vol.
The OR stage is known for such systems that were usually synthesized using the molecular-beam epitaxy in the Stranski-Krastanov mode before [24].