The system is intended for the use of high-purity (8N to 9N) organometallic Pozessgase for the growth and doping (ie H2, N2, NH3, TMGa, TMAl
, SiH4 or Si.sub.2H.sub.6, Cp2Mg) at process temperatures up to 1 300 A C (ideally =1400 A C) and process pressures of 50 to 800 mbar to be designed.
Epitaxial [Al.sub.1-x][In.sub.x]N (x = 0.04, 0.18, 0.20, 0.47, and 0.48) layers were grown on double-polished 2-inch diameter sapphire ([Al.sub.2][O.sub.3]) substrates in a low pressure MOCVD reactor (Aixtron 200/4 HT-S) by using trimethylgallium (TMGa), trimethylaluminum (TMAl
), trimethylindium (TMIn), and ammonia as Ga, Al, In, and N precursors, respectively.
The investment at the company s Battleground facility in Texas involves extending the Tri-Methyl-Aluminum (TMAL
) unit and building a new Tri-Methyl-Gallium (TMG) plant consolidating the plant s status as the largest of its kind in the world.
The new office in Warren will support a recently awarded Omnibus III Blanket Purchase Agreement (BPA) with the Program Executive Office for Combat Support and Combat Service Support (PEO CS&CSS) as well as enhance our existing support of the Technical, Management, and Logistics Support (TMALS